@inproceedings{a601d8cbdddf47daaf0d6d5bc46d3ff2,
title = "Simultaneous doping / etching (SDE) process of multilayer graphene on Ni for low resistance metallization",
abstract = "In order to form a multilayer graphene film of low resistance without transferring to the device, we have developed a simultaneous doping / etching (SDE) process to remove the Ni catalyst layer during MoCl5 intercalation doping to CVD-grown MLG on Ni catalyst. The obtained sheet resistance of the doped MLG (∼ 20 nm thick) was 40% lower than the MLG/Ni (∼ 320 nm) before the SDE process.",
keywords = "CVD, doping, multilayer graphene, transfer-free",
author = "Kosuke Yokosawa and Tomoki Akimoto and Yuri Okada and Kazuyoshi Ueno",
note = "Funding Information: This work was supported by JSPS KAKENHI Grant Number JP 18K 04289 and the Research Center for Green Innovation of SIT. Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",
year = "2019",
month = mar,
doi = "10.1109/EDTM.2019.8731211",
language = "English",
series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "47--49",
booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
}