Sputter Deposition and Characterization of Sm-Doped Pb(Mg1/3, Nb2/3)O-PbTiO Epitaxial Thin Film on Si Toward Giant-Piezoelectric Thin Film for MEMS Actuator Application

Xuanmeng Qi; Shinya Yoshida; Shuji Tanaka

doi:10.1109/TUFFC.2022.3156881

Sputter Deposition and Characterization of Sm-Doped Pb(Mg_1/3, Nb_2/3)O-PbTiO Epitaxial Thin Film on Si Toward Giant-Piezoelectric Thin Film for MEMS Actuator Application

Xuanmeng Qi, Shinya Yoshida, Shuji Tanaka

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

To meet the growing demand for better piezoelectric thin films for microelectromechanical systems (MEMSs), we have developed an SM-doped Pb(Mg1/3, Nb2/3)O3-PbTiO3 (Sm-PMN-PT) epitaxial thin film as a next-generation piezoelectric thin film to replace Pb(Zr, Ti)O3 (PZT). The inherent piezoelectricity $\left |{ {e}_{{31},{f}} }\right |$ achieved 20 C/m2, which is greater than those of intrinsic PZT thin films and the best Nb-doped PZT thin film. Besides, the simulation results show that the $\left |{ {e}_{{31},{f}} }\right |$ value of the single Sm-PMN-PT film could be around 26 C/m2. Meanwhile, the breakdown voltage of the as-deposited thin film was higher than 300 kV/cm. These results suggest the high potential of the Sm-PMN-PT epitaxial thin film for piezo-MEMS actuators with large displacement or force.

Original language	English
Pages (from-to)	1821-1828
Number of pages	8
Journal	IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume	69
Issue number	5
DOIs	https://doi.org/10.1109/TUFFC.2022.3156881
Publication status	Published - 2022 May 1
Externally published	Yes

Keywords

Microelectromechanical systems (MEMSs)
Sm-PMN-PT
piezoelectric MEMS actuator
relaxor-based ferroelectric thin film
transverse piezoelectric coefficient

ASJC Scopus subject areas

Instrumentation
Acoustics and Ultrasonics
Electrical and Electronic Engineering

Access to Document

10.1109/TUFFC.2022.3156881

Cite this

Sputter Deposition and Characterization of Sm-Doped Pb(Mg_1/3, Nb_2/3)O-PbTiO Epitaxial Thin Film on Si Toward Giant-Piezoelectric Thin Film for MEMS Actuator Application. / Qi, Xuanmeng; Yoshida, Shinya; Tanaka, Shuji.

In: IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, Vol. 69, No. 5, 01.05.2022, p. 1821-1828.

Research output: Contribution to journal › Article › peer-review

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abstract = "To meet the growing demand for better piezoelectric thin films for microelectromechanical systems (MEMSs), we have developed an SM-doped Pb(Mg1/3, Nb2/3)O3-PbTiO3 (Sm-PMN-PT) epitaxial thin film as a next-generation piezoelectric thin film to replace Pb(Zr, Ti)O3 (PZT). The inherent piezoelectricity $\left |{ {e}_{{31},{f}} }\right |$ achieved 20 C/m2, which is greater than those of intrinsic PZT thin films and the best Nb-doped PZT thin film. Besides, the simulation results show that the $\left |{ {e}_{{31},{f}} }\right |$ value of the single Sm-PMN-PT film could be around 26 C/m2. Meanwhile, the breakdown voltage of the as-deposited thin film was higher than 300 kV/cm. These results suggest the high potential of the Sm-PMN-PT epitaxial thin film for piezo-MEMS actuators with large displacement or force.",

keywords = "Microelectromechanical systems (MEMSs), Sm-PMN-PT, piezoelectric MEMS actuator, relaxor-based ferroelectric thin film, transverse piezoelectric coefficient",

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