Stepwise sleep depth control for run-time leakage power saving

Seidai Takeda, Shinobu Miwa, Kimiyoshi Usami, Hiroshi Nakamura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Recently, run-time sleep control scheme using multiple sleep modes have been studied. In those studies, each sleep mode has its own sleep depth. Deeper sleep mode provides higher leakage saving but incurs larger overhead energy.Use of multiple modes is helpful for further leakage saving if an appropriate mode is selected, but the best mode depends on the idle period whose length cannot be told in advance.Although the implementations how to realize different sleep depths have been well studied, few attention has been paid to the method of how to select the best sleep depth dynamically during execution. This paper proposes a simple but novel sleep control scheme, called stepwise sleep depth control, which aims to select the best depth among provided multiple sleep depths.Our scheme automatically applies deeper depth in a step-by-step manner after an idle state starts. It successfully reduces leakage energy while only a small modification is required for circuit implementation. This paper also proposes a methodology for optimizing control parameters of our sleep control scheme according to program behavior and temperature. Experimental result shows that stepwise sleep depth control applied to body biasing circuit improves net leakage saving of up to 43% for FPAlu at 1.0GHz, 75°C compared to conventional reverse body biasing.

Original languageEnglish
Title of host publicationGLSVLSI'12 - Proceedings of the Great Lakes Symposium on VLSI 2012
Pages233-238
Number of pages6
DOIs
Publication statusPublished - 2012
Event22nd Great Lakes Symposium on VLSI, GLSVLSI'2012 - Salt Lake City, UT, United States
Duration: 2012 May 32012 May 4

Publication series

NameProceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI

Conference

Conference22nd Great Lakes Symposium on VLSI, GLSVLSI'2012
Country/TerritoryUnited States
CitySalt Lake City, UT
Period12/5/312/5/4

ASJC Scopus subject areas

  • Engineering(all)

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