Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties

M. Miyoshi; T. Egawa; H. Ishikawa

Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties

M. Miyoshi, T. Egawa, H. Ishikawa

Functional Control Systems

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1527-1531
Journal	J. Vac. Sci. Technol. B,
Volume	Vol. 23
Publication status	Published - 2005 Aug 1

Cite this

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title = "Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties",

author = "M. Miyoshi and T. Egawa and H. Ishikawa",

year = "2005",

month = aug,

day = "1",

language = "English",

volume = "Vol. 23",

pages = "1527--1531",

journal = "J. Vac. Sci. Technol. B,",

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TY - JOUR

T1 - Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties

AU - Miyoshi, M.

AU - Egawa, T.

AU - Ishikawa, H.

PY - 2005/8/1

Y1 - 2005/8/1

M3 - Article

VL - Vol. 23

SP - 1527

EP - 1531

JO - J. Vac. Sci. Technol. B,

JF - J. Vac. Sci. Technol. B,

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