TY - GEN
T1 - Structure and ferroelectric properties of high TcBi(Me)O3-PbTiO3 single crystal thin films
AU - Wasa, K.
AU - Hanzawa, H.
AU - Yoshida, S.
AU - Tanaka, S.
AU - Adachi, H.
AU - Matsunaga, T.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/29
Y1 - 2015/7/29
N2 - Pb(Zr,Ti)O3 (PZT) piezoelectric ceramics with higher Curie temperature Tc are necessary for a fabrication of better micro actuators, sensors, memories and/or piezoelectric micro electromechanical systems(MEMS). New piezoelectric materials with higher Tcbeyond PZT are extensively studied. Among the new piezoelectric materials, Bi(Me)O3-xPbTiO3 ceramics(Me: Yb, In, Sc) are fascinated for the higher Tc materials. In this paper thin films of single crystal (1-x)BiScO3-xPbTiO3 (BS-xPT) were deposited by an rf-magnetron sputtering for a better understanding of ferroelectric performance of the BS-xPT. We have made a laminated composite structure comprising relaxed hetero-epitaxial single crystal thin films of high TcBS-xPT (0.5≤x≤0.8) and SrRuO3(SRO)/Pt/MgO hetero-structural substrates. It was confirmed their ferroelectric performances of the BS-xPT thin films were comparable to the PZT based thin films: a thin film transverse piezoelectricity e31,f was -6.7C/m2 at x=0.8 with 2Pr=∼60μC/cm2, 2Ec=∼250 kV/cm, and ε/εo=∼150. The BS-0.8PT thin films exhibit extraordinary high Tc with Tc=750°C. The enhanced Tc is caused by the presence of the high temperature stable interface in the laminated composite structure. The present BS-xPT thin films have a high potential for a fabrication of high temperature stable piezoelectric MEMS beyond PZT.
AB - Pb(Zr,Ti)O3 (PZT) piezoelectric ceramics with higher Curie temperature Tc are necessary for a fabrication of better micro actuators, sensors, memories and/or piezoelectric micro electromechanical systems(MEMS). New piezoelectric materials with higher Tcbeyond PZT are extensively studied. Among the new piezoelectric materials, Bi(Me)O3-xPbTiO3 ceramics(Me: Yb, In, Sc) are fascinated for the higher Tc materials. In this paper thin films of single crystal (1-x)BiScO3-xPbTiO3 (BS-xPT) were deposited by an rf-magnetron sputtering for a better understanding of ferroelectric performance of the BS-xPT. We have made a laminated composite structure comprising relaxed hetero-epitaxial single crystal thin films of high TcBS-xPT (0.5≤x≤0.8) and SrRuO3(SRO)/Pt/MgO hetero-structural substrates. It was confirmed their ferroelectric performances of the BS-xPT thin films were comparable to the PZT based thin films: a thin film transverse piezoelectricity e31,f was -6.7C/m2 at x=0.8 with 2Pr=∼60μC/cm2, 2Ec=∼250 kV/cm, and ε/εo=∼150. The BS-0.8PT thin films exhibit extraordinary high Tc with Tc=750°C. The enhanced Tc is caused by the presence of the high temperature stable interface in the laminated composite structure. The present BS-xPT thin films have a high potential for a fabrication of high temperature stable piezoelectric MEMS beyond PZT.
KW - beyond PZT
KW - BS-xPT thin films
KW - high Curie temperature
KW - relaxed single crystal thin films
KW - sputtered hetero-epitaxial thin films
UR - http://www.scopus.com/inward/record.url?scp=84947969250&partnerID=8YFLogxK
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U2 - 10.1109/ISAF.2015.7172663
DO - 10.1109/ISAF.2015.7172663
M3 - Conference contribution
AN - SCOPUS:84947969250
T3 - 2015 Joint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015
SP - 40
EP - 43
BT - 2015 Joint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Joint IEEE International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop, ISAF/ISIF/PFM 2015
Y2 - 24 May 2015 through 27 May 2015
ER -