Studies of electron beam evaporated SiO₂/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Engineering & Materials Science

• Oxide semiconductors 100%
• Electron beams 99%
• High electron mobility transistors 97%
• Metals 54%
• Gates (transistor) 14%
• Drain current 13%
• Transconductance 12%
• Leakage currents 11%
• Electric potential 10%
• Current density 10%
• Capacitance 9%

Physics & Astronomy

• high electron mobility transistors 87%
• metal oxide semiconductors 86%
• electron beams 60%
• transconductance 11%
• electric potential 11%
• high current 9%
• leakage 8%
• plots 8%
• occurrences 8%
• capacitance 8%
• traps 7%
• insulators 7%
• injection 7%
• current density 7%