Abstract
Summary form only given. Dependence of performance of p-channel AlGaAs/GaAs MIS-like heterostructure FETs (HFETs) on device parameters is investigated and estimates are made of expected device performance. Based on the experimental results, the p-channel HFETs are expected to achieve nearly 300-mS/mm transconductance at 77 K in 1- mu m-long gate devices.
| Original language | English |
|---|---|
| Pages (from-to) | 1839 |
| Number of pages | 1 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | ED-33 |
| Issue number | 11 |
| Publication status | Published - 1986 Nov |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)