Submicrometer gold interconnect wiring by sidewall electroplating technology

Makoto Hirano; Shinji Aoyama; Kimiyoshi Yamasaki

doi:10.1143/JJAP.33.L553

Submicrometer gold interconnect wiring by sidewall electroplating technology

Makoto Hirano, Shinji Aoyama, Kimiyoshi Yamasaki

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A novel technique for forming submicrometer gold wires is proposed to realize high-density interconnection in LSIs. The wires are fabricated into a structure which is buried in an insulator spacer using sidewall electroplating technology. Optimum plating conditions are studied to achieve good metaling conformability and uniformity. By optimizing the plating conditions, gold interconnect wires with submicrometer linewidth and spacing are formed with good surface planarity of the buried structure.

Original language	English
Pages (from-to)	L553-L555
Journal	Japanese Journal of Applied Physics
Volume	33
Issue number	4
DOIs	https://doi.org/10.1143/JJAP.33.L553
Publication status	Published - 1994 Apr
Externally published	Yes

Keywords

Electroplating
Gold
Interconnect wiring
Sidewall
Submicrometer

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.33.L553

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title = "Submicrometer gold interconnect wiring by sidewall electroplating technology",

abstract = "A novel technique for forming submicrometer gold wires is proposed to realize high-density interconnection in LSIs. The wires are fabricated into a structure which is buried in an insulator spacer using sidewall electroplating technology. Optimum plating conditions are studied to achieve good metaling conformability and uniformity. By optimizing the plating conditions, gold interconnect wires with submicrometer linewidth and spacing are formed with good surface planarity of the buried structure.",

keywords = "Electroplating, Gold, Interconnect wiring, Sidewall, Submicrometer",

author = "Makoto Hirano and Shinji Aoyama and Kimiyoshi Yamasaki",

year = "1994",

month = apr,

doi = "10.1143/JJAP.33.L553",

language = "English",

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pages = "L553--L555",

journal = "Japanese Journal of Applied Physics",

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publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Submicrometer gold interconnect wiring by sidewall electroplating technology

AU - Hirano, Makoto

AU - Aoyama, Shinji

AU - Yamasaki, Kimiyoshi

PY - 1994/4

Y1 - 1994/4

N2 - A novel technique for forming submicrometer gold wires is proposed to realize high-density interconnection in LSIs. The wires are fabricated into a structure which is buried in an insulator spacer using sidewall electroplating technology. Optimum plating conditions are studied to achieve good metaling conformability and uniformity. By optimizing the plating conditions, gold interconnect wires with submicrometer linewidth and spacing are formed with good surface planarity of the buried structure.

AB - A novel technique for forming submicrometer gold wires is proposed to realize high-density interconnection in LSIs. The wires are fabricated into a structure which is buried in an insulator spacer using sidewall electroplating technology. Optimum plating conditions are studied to achieve good metaling conformability and uniformity. By optimizing the plating conditions, gold interconnect wires with submicrometer linewidth and spacing are formed with good surface planarity of the buried structure.

KW - Electroplating

KW - Gold

KW - Interconnect wiring

KW - Sidewall

KW - Submicrometer

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DO - 10.1143/JJAP.33.L553

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4

ER -

Submicrometer gold interconnect wiring by sidewall electroplating technology

Abstract

Keywords

ASJC Scopus subject areas

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