| Original language | English |
|---|---|
| Pages (from-to) | 2217-2222 |
| Journal | IEEE Trans. on Electron Devices |
| Volume | 36 |
| Publication status | Published - 1989 Oct 1 |
Submicron n+Ge Gate AlGaAs/GaAs MISFETs
Makoto Hirano
Research output: Contribution to journal › Article › peer-review