TY - GEN
T1 - Suppression of anti-resonance peaks by controlling off-chip damping parameters
AU - Iijima, Yoh
AU - Sudo, Toshio
AU - Kinoshita, Tomohiro
AU - Uriu, Kazuhide
PY - 2013/12/1
Y1 - 2013/12/1
N2 - Simultaneous switching noise (SSN) is a serious design issue to stabilize power supply integrity and logic operation in advanced CMOS circuits and systems. Furthermore, SSN causes electromagnetic interference (EMI). Ringing frequency observed in the SSN waveforms is strongly related to the anti-resonance peak frequency of the total PDN impedance. Therefore, suppressing the anti-resonance peak is currently one of the most important design concerns in VLSI systems. In this paper, the method which is called 'on-board snubber circuits (RC series circuits)' has been studied to suppress the anti-resonance peak. The on-board snubber circuits was added just at the beneath of the power supply terminals of the LSI to effectively suppress the anti-resonance peak of the total PDN impedance. In particular, the design space for damping the anti-resonance peak critically and the added values of capacitance (C snb) and resistance (Rdmp) of the snubber circuits has been examined.
AB - Simultaneous switching noise (SSN) is a serious design issue to stabilize power supply integrity and logic operation in advanced CMOS circuits and systems. Furthermore, SSN causes electromagnetic interference (EMI). Ringing frequency observed in the SSN waveforms is strongly related to the anti-resonance peak frequency of the total PDN impedance. Therefore, suppressing the anti-resonance peak is currently one of the most important design concerns in VLSI systems. In this paper, the method which is called 'on-board snubber circuits (RC series circuits)' has been studied to suppress the anti-resonance peak. The on-board snubber circuits was added just at the beneath of the power supply terminals of the LSI to effectively suppress the anti-resonance peak of the total PDN impedance. In particular, the design space for damping the anti-resonance peak critically and the added values of capacitance (C snb) and resistance (Rdmp) of the snubber circuits has been examined.
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U2 - 10.1109/EDAPS.2013.6724397
DO - 10.1109/EDAPS.2013.6724397
M3 - Conference contribution
AN - SCOPUS:84894134702
SN - 9781479923113
T3 - EDAPS 2013 - 2013 IEEE Electrical Design of Advanced Packaging Systems Symposium
SP - 92
EP - 95
BT - EDAPS 2013 - 2013 IEEE Electrical Design of Advanced Packaging Systems Symposium
T2 - 2013 6th IEEE Electrical Design of Advanced Packaging Systems Symposium, EDAPS 2013
Y2 - 12 December 2013 through 15 December 2013
ER -