TY - JOUR
T1 - Surface defects and bulk defect migration produced by ion bombardment of Si(001)
AU - Kyuno, K.
AU - Cahill, David G.
AU - Averback, R. S.
AU - Tarus, J.
AU - Nordlund, K.
PY - 1999/1/1
Y1 - 1999/1/1
N2 - Variable-temperature scanning tunneling microscopy is used to characterize surface defects created by 4.5 keV He ion bombardment of Si(001) at 80–294 K; surface defects are created directly by ion bombardment and by diffusion of bulk defects to the surface. The heights and areal densities of adatoms, dimers, and adatom clusters at 80 and 130 K are approximately independent of temperature and in reasonable agreement with molecular dynamics calculations of adatom production. At 180 K, the areal density of these surface features is enhanced by a factor of ˜3. This experimental result is explained by the migration and surface trapping of bulk interstitials formed within ˜2 nm of the surface.
AB - Variable-temperature scanning tunneling microscopy is used to characterize surface defects created by 4.5 keV He ion bombardment of Si(001) at 80–294 K; surface defects are created directly by ion bombardment and by diffusion of bulk defects to the surface. The heights and areal densities of adatoms, dimers, and adatom clusters at 80 and 130 K are approximately independent of temperature and in reasonable agreement with molecular dynamics calculations of adatom production. At 180 K, the areal density of these surface features is enhanced by a factor of ˜3. This experimental result is explained by the migration and surface trapping of bulk interstitials formed within ˜2 nm of the surface.
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U2 - 10.1103/PhysRevLett.83.4788
DO - 10.1103/PhysRevLett.83.4788
M3 - Article
AN - SCOPUS:0001268548
SN - 0031-9007
VL - 83
SP - 4788
EP - 4791
JO - Physical Review Letters
JF - Physical Review Letters
IS - 23
ER -