Surface defects and bulk defect migration produced by ion bombardment of Si(001)

K.Kyuno K.Kyuno, D.G.Cahill D.G.Cahill, R.S.Averback R.S.Averback, J.Tarus J.Tarus, K.Nordlund K.Nordlund, Kentaro Kyuno

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Cite this

@article{d4bd3020d80f4bdc81644ce1136ef7a6,

title = "Surface defects and bulk defect migration produced by ion bombardment of Si(001)",

author = "K.Kyuno K.Kyuno and D.G.Cahill D.G.Cahill and R.S.Averback R.S.Averback and J.Tarus J.Tarus and K.Nordlund K.Nordlund and Kentaro Kyuno",

year = "1999",

month = apr,

day = "1",

language = "English",

volume = "83",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

}

TY - JOUR

T1 - Surface defects and bulk defect migration produced by ion bombardment of Si(001)

AU - K.Kyuno, K.Kyuno

AU - D.G.Cahill, D.G.Cahill

AU - R.S.Averback, R.S.Averback

AU - J.Tarus, J.Tarus

AU - K.Nordlund, K.Nordlund

AU - Kyuno, Kentaro

PY - 1999/4/1

Y1 - 1999/4/1

M3 - Article

SN - 0031-9007

VL - 83

JO - Physical Review Letters

JF - Physical Review Letters

ER -