Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

S. Arulkumaran; T. Egawa; H. Ishikawa; T. Jimbo; Y. Sano

doi:10.1063/1.1642276

Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO₂, Si₃N₄, and silicon oxynitride

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo, Y. Sano

Research output: Contribution to journal › Article › peer-review

209 Citations (Scopus)

Abstract

The effects of surface passivation on AlGaN/GaN high-electron-mobility transistors (HEMT) were analyzed. An increase in maximum drain current (I _Dmax) and extrinsic transductance(g_mmax) was observed on comparing the passivated (SiO₂, Si₃N₄ and silicon oxynitride) HEMT with the unpassivated HEMT. A small increase in I _gLeak was also observed on silicon oxynitride passivated HEMT. Result show that high breakdown voltage (BV_gd) on SiO₂ passivated HEMT were due to the formation of deep traps.

Original language	English
Pages (from-to)	613-615
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	4
DOIs	https://doi.org/10.1063/1.1642276
Publication status	Published - 2004 Jan 26
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride",

abstract = "The effects of surface passivation on AlGaN/GaN high-electron-mobility transistors (HEMT) were analyzed. An increase in maximum drain current (I Dmax) and extrinsic transductance(gmmax) was observed on comparing the passivated (SiO2, Si3N4 and silicon oxynitride) HEMT with the unpassivated HEMT. A small increase in I gLeak was also observed on silicon oxynitride passivated HEMT. Result show that high breakdown voltage (BVgd) on SiO2 passivated HEMT were due to the formation of deep traps.",

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T1 - Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

AU - Arulkumaran, S.

AU - Egawa, T.

AU - Ishikawa, H.

AU - Jimbo, T.

AU - Sano, Y.

PY - 2004/1/26

Y1 - 2004/1/26

N2 - The effects of surface passivation on AlGaN/GaN high-electron-mobility transistors (HEMT) were analyzed. An increase in maximum drain current (I Dmax) and extrinsic transductance(gmmax) was observed on comparing the passivated (SiO2, Si3N4 and silicon oxynitride) HEMT with the unpassivated HEMT. A small increase in I gLeak was also observed on silicon oxynitride passivated HEMT. Result show that high breakdown voltage (BVgd) on SiO2 passivated HEMT were due to the formation of deep traps.

AB - The effects of surface passivation on AlGaN/GaN high-electron-mobility transistors (HEMT) were analyzed. An increase in maximum drain current (I Dmax) and extrinsic transductance(gmmax) was observed on comparing the passivated (SiO2, Si3N4 and silicon oxynitride) HEMT with the unpassivated HEMT. A small increase in I gLeak was also observed on silicon oxynitride passivated HEMT. Result show that high breakdown voltage (BVgd) on SiO2 passivated HEMT were due to the formation of deep traps.

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Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO₂, Si₃N₄, and silicon oxynitride

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