Temperature-dependent magnetic and resistive switching phenomena in (La,Ba)MnO3/ZnO heterostructure

Taras Polek, Elena H. Sanchez, Jose M. Colino, Peter S. Normile, Gurmeet Singh Lotey, Alexandr Tovstolytkin, Yoshinobu Nakamura, Lakshmi Reddy, Satoru Kaneko, Paolo Mele, Tamio Endo

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Electric, magnetic and resonance properties of La0·7Ba0·3MnO3/ZnO heterostructure fabricated on MgO (001) and LaAlO3 (100) substrates by ion-beam sputtering have been studied in the work. Good crystallinity and phase purity of all heterostructure components have been confirmed using X-ray diffraction. Phase separated magnetic state of the manganite layer of heterostructure has been experimentally proved in the temperature region from 300 K down to 3 K. It has been shown that (La,Ba)MnO3/ZnO bilayer exhibits multi-step resistive switching as voltage exceeds a certain temperature-dependent threshold value. Detailed study of the resistive switching processes has been carried out at room temperature and in the low-temperature region. It is concluded that phase-separated state of manganites is responsible for strong temperature-induced transformation of the features of resistive switching phenomena.

Original languageEnglish
Pages (from-to)525-532
Number of pages8
JournalSuperlattices and Microstructures
Publication statusPublished - 2018 Aug


  • (La,Ba)MnO/ZnO heterojunction
  • Magnetic phase separation
  • Oxide heterostructures
  • Oxygen vacancy migration
  • Resistive switching

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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