Terahertz-wave generation using GaSe crystals with different carrier densities

T. Tanabe; K. Suto; J. Nishizawa; T. Sasaki; H. Yasuda; Y. Oyama

Terahertz-wave generation using GaSe crystals with different carrier densities

T. Tanabe, K. Suto, J. Nishizawa, T. Sasaki, H. Yasuda, Y. Oyama

Research output: Contribution to journal › Conference article › peer-review

Abstract

The frequency range and output power of THz-wave generated from GaSe crystals were investigated from the viewpoint of carrier density. THz-waves were generated from the low carrier density GaSe (10¹⁰ cm^-3) in a wider frequency range than that from the high carrier density GaSe (10 ¹⁴ cm^-3). At frequency below 1.3 THz, the THz-wave output power increases with decreasing carrier density in GaSe. By using GaSe with lower carrier density, higher power and a wider frequency range of the THz-wave generation would be expected.

Original language	English
Pages (from-to)	85-88
Number of pages	4
Journal	Institute of Physics Conference Series
Volume	184
Publication status	Published - 2005
Externally published	Yes
Event	31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of Duration: 2004 Sept 12 → 2004 Dec 16

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

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title = "Terahertz-wave generation using GaSe crystals with different carrier densities",

abstract = "The frequency range and output power of THz-wave generated from GaSe crystals were investigated from the viewpoint of carrier density. THz-waves were generated from the low carrier density GaSe (1010 cm-3) in a wider frequency range than that from the high carrier density GaSe (10 14 cm-3). At frequency below 1.3 THz, the THz-wave output power increases with decreasing carrier density in GaSe. By using GaSe with lower carrier density, higher power and a wider frequency range of the THz-wave generation would be expected.",

author = "T. Tanabe and K. Suto and J. Nishizawa and T. Sasaki and H. Yasuda and Y. Oyama",

year = "2005",

language = "English",

volume = "184",

pages = "85--88",

journal = "Institute of Physics Conference Series",

issn = "0951-3248",

publisher = "IOP Publishing Ltd.",

note = "31st International Symposium of Compound Semiconductors 2004 ; Conference date: 12-09-2004 Through 16-12-2004",

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TY - JOUR

T1 - Terahertz-wave generation using GaSe crystals with different carrier densities

AU - Tanabe, T.

AU - Suto, K.

AU - Nishizawa, J.

AU - Sasaki, T.

AU - Yasuda, H.

AU - Oyama, Y.

PY - 2005

Y1 - 2005

N2 - The frequency range and output power of THz-wave generated from GaSe crystals were investigated from the viewpoint of carrier density. THz-waves were generated from the low carrier density GaSe (1010 cm-3) in a wider frequency range than that from the high carrier density GaSe (10 14 cm-3). At frequency below 1.3 THz, the THz-wave output power increases with decreasing carrier density in GaSe. By using GaSe with lower carrier density, higher power and a wider frequency range of the THz-wave generation would be expected.

AB - The frequency range and output power of THz-wave generated from GaSe crystals were investigated from the viewpoint of carrier density. THz-waves were generated from the low carrier density GaSe (1010 cm-3) in a wider frequency range than that from the high carrier density GaSe (10 14 cm-3). At frequency below 1.3 THz, the THz-wave output power increases with decreasing carrier density in GaSe. By using GaSe with lower carrier density, higher power and a wider frequency range of the THz-wave generation would be expected.

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M3 - Conference article

AN - SCOPUS:33644545056

SN - 0951-3248

VL - 184

SP - 85

EP - 88

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

T2 - 31st International Symposium of Compound Semiconductors 2004

Y2 - 12 September 2004 through 16 December 2004

ER -

Terahertz-wave generation using GaSe crystals with different carrier densities

Abstract

ASJC Scopus subject areas

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