| Original language | English |
|---|---|
| Pages (from-to) | 975-979 |
| Journal | Materials Science in Semiconductor Orocessing |
| Volume | 9 |
| Publication status | Published - 2006 Dec 17 |
The effect of oxygene in Ru gate electrode on effctive work function of Ru/HfO2 stack structure
T.Nabatame T.Nabatame, K.Segawa K.Segawa, M.Kadoshima M.Kadoshima, H.Takaba H.Takaba, K.Iwamoto K.Iwamoto, S.Kimura S.Kimura, Y.Nunoshige Y.Nunoshige, H.Satake H.Satake, T.Ohishi T.Ohishi, A.Toriumi A.Toriumi, Tomoji Oishi
Research output: Contribution to journal › Article › peer-review
16
Citations
(Scopus)