Thermoelectric properties of Al-doped ZnO thin films

S. Saini; P. Mele; H. Honda; K. Matsumoto; K. Miyazaki; A. Ichinose

doi:10.1007/s11664-014-2992-x

Thermoelectric properties of Al-doped ZnO thin films

S. Saini, P. Mele, H. Honda, K. Matsumoto, K. Miyazaki, A. Ichinose

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO₃ substrates by a pulsed laser deposition technique at various deposition temperatures (T _dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10^-3 Wm^-1 K^-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10^-3 Wm^-1 K ^-2 at 600 K, surpassing the best AZO film previously reported in the literature.

Original language	English
Pages (from-to)	2145-2150
Number of pages	6
Journal	Journal of Electronic Materials
Volume	43
Issue number	6
DOIs	https://doi.org/10.1007/s11664-014-2992-x
Publication status	Published - 2014 Jun
Externally published	Yes

Keywords

PLD
Seebeck
Thermoelectric
ZnO thin films
power factor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-014-2992-x

Cite this

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abstract = "We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures (T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K -2 at 600 K, surpassing the best AZO film previously reported in the literature.",

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author = "S. Saini and P. Mele and H. Honda and K. Matsumoto and K. Miyazaki and A. Ichinose",

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T1 - Thermoelectric properties of Al-doped ZnO thin films

AU - Saini, S.

AU - Mele, P.

AU - Honda, H.

AU - Matsumoto, K.

AU - Miyazaki, K.

AU - Ichinose, A.

PY - 2014/6

Y1 - 2014/6

N2 - We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures (T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K -2 at 600 K, surpassing the best AZO film previously reported in the literature.

AB - We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures (T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K -2 at 600 K, surpassing the best AZO film previously reported in the literature.

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KW - Seebeck

KW - Thermoelectric

KW - ZnO thin films

KW - power factor

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Thermoelectric properties of Al-doped ZnO thin films

Abstract

Keywords

ASJC Scopus subject areas

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