TY - JOUR
T1 - Thickness-dependent structural and optical properties of VO2 thin films
AU - Ma, Jianwei
AU - Xu, Gang
AU - Miao, Lei
AU - Tazawa, Masato
AU - Tanemura, Sakae
PY - 2011/2
Y1 - 2011/2
N2 - VO2 thin films with thicknesses from 100 to 2 nm were prepared on C-plane sapphire (0001) substrates by magnetron sputtering and remarkable thickness-dependent structural and optical properties were found. Below 10 nm, the films are nonconductive, island structured, and their phase transition temperatures are reduced to be much lower than those of the continuous, thick films. Structural defects in the island crystal films may be one of the main reasons for this temperature reduction. The film growth mode was identified to be the Vollmer-Weber (island growth)-type in the initial stage.
AB - VO2 thin films with thicknesses from 100 to 2 nm were prepared on C-plane sapphire (0001) substrates by magnetron sputtering and remarkable thickness-dependent structural and optical properties were found. Below 10 nm, the films are nonconductive, island structured, and their phase transition temperatures are reduced to be much lower than those of the continuous, thick films. Structural defects in the island crystal films may be one of the main reasons for this temperature reduction. The film growth mode was identified to be the Vollmer-Weber (island growth)-type in the initial stage.
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U2 - 10.1143/JJAP.50.020215
DO - 10.1143/JJAP.50.020215
M3 - Article
AN - SCOPUS:79951914130
SN - 0021-4922
VL - 50
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 2
M1 - 020215
ER -