Three-dimensional masterslice MMIC on Si substrate

I. Toyoda; K. Nishikawa; T. Tokumitsu; K. Kamogawa; Ch Yamaguchi; M. Hirano; M. Aikawa

Three-dimensional masterslice MMIC on Si substrate

I. Toyoda, K. Nishikawa, T. Tokumitsu, K. Kamogawa, Ch Yamaguchi, M. Hirano, M. Aikawa

Research output: Contribution to conference › Paper › peer-review

Abstract

This paper describes Si based three-dimensional MMIC technology. This technology greatly improves the operating frequency of Si MMICs up to the Ku-band and makes them competitive with GaAs MMICs in the higher frequency band. An X-band amplifier and highly integrated single-chip receiver using Si bipolar transistors are demonstrated to highlight the advantages of the Si 3-D MMIC technology. Cost estimation compared with conventional GaAs 2-D MMICs is also discussed.

Original language	English
Pages	113-116
Number of pages	4
Publication status	Published - 1997 Dec 1
Event	Proceedings of the 1997 IEEE Radio Frequency Integrated Circuits Symposium, RFIC - Denver, CO, USA Duration: 1997 Jun 8 → 1997 Jun 11

Other

Other	Proceedings of the 1997 IEEE Radio Frequency Integrated Circuits Symposium, RFIC
City	Denver, CO, USA
Period	97/6/8 → 97/6/11

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "Three-dimensional masterslice MMIC on Si substrate",

abstract = "This paper describes Si based three-dimensional MMIC technology. This technology greatly improves the operating frequency of Si MMICs up to the Ku-band and makes them competitive with GaAs MMICs in the higher frequency band. An X-band amplifier and highly integrated single-chip receiver using Si bipolar transistors are demonstrated to highlight the advantages of the Si 3-D MMIC technology. Cost estimation compared with conventional GaAs 2-D MMICs is also discussed.",

author = "I. Toyoda and K. Nishikawa and T. Tokumitsu and K. Kamogawa and Ch Yamaguchi and M. Hirano and M. Aikawa",

year = "1997",

month = dec,

day = "1",

language = "English",

pages = "113--116",

note = "Proceedings of the 1997 IEEE Radio Frequency Integrated Circuits Symposium, RFIC ; Conference date: 08-06-1997 Through 11-06-1997",

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TY - CONF

T1 - Three-dimensional masterslice MMIC on Si substrate

AU - Toyoda, I.

AU - Nishikawa, K.

AU - Tokumitsu, T.

AU - Kamogawa, K.

AU - Yamaguchi, Ch

AU - Hirano, M.

AU - Aikawa, M.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - This paper describes Si based three-dimensional MMIC technology. This technology greatly improves the operating frequency of Si MMICs up to the Ku-band and makes them competitive with GaAs MMICs in the higher frequency band. An X-band amplifier and highly integrated single-chip receiver using Si bipolar transistors are demonstrated to highlight the advantages of the Si 3-D MMIC technology. Cost estimation compared with conventional GaAs 2-D MMICs is also discussed.

AB - This paper describes Si based three-dimensional MMIC technology. This technology greatly improves the operating frequency of Si MMICs up to the Ku-band and makes them competitive with GaAs MMICs in the higher frequency band. An X-band amplifier and highly integrated single-chip receiver using Si bipolar transistors are demonstrated to highlight the advantages of the Si 3-D MMIC technology. Cost estimation compared with conventional GaAs 2-D MMICs is also discussed.

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UR - http://www.scopus.com/inward/citedby.url?scp=0031370025&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0031370025

SP - 113

EP - 116

T2 - Proceedings of the 1997 IEEE Radio Frequency Integrated Circuits Symposium, RFIC

Y2 - 8 June 1997 through 11 June 1997

ER -

Three-dimensional masterslice MMIC on Si substrate

Abstract

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ASJC Scopus subject areas

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