Trade-off relationship between breakdown and gate-lag in recessed-gate GaAs FETs

Y. Mitani, D. Kasai, K. Horio

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	143-146
Journal	Proceedings of 2003 International Conference on Compound Semiconductor Manufacturing Technology, Arizona, USA
Publication status	Published - 2003 May 1

Cite this

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title = "Trade-off relationship between breakdown and gate-lag in recessed-gate GaAs FETs",

author = "Y. Mitani and D. Kasai and K. Horio",

year = "2003",

month = may,

day = "1",

language = "English",

pages = "143--146",

journal = "Proceedings of 2003 International Conference on Compound Semiconductor Manufacturing Technology, Arizona, USA",

}

TY - JOUR

T1 - Trade-off relationship between breakdown and gate-lag in recessed-gate GaAs FETs

AU - Mitani, Y.

AU - Kasai, D.

AU - Horio, K.

PY - 2003/5/1

Y1 - 2003/5/1

M3 - Article

SP - 143

EP - 146

JO - Proceedings of 2003 International Conference on Compound Semiconductor Manufacturing Technology, Arizona, USA

JF - Proceedings of 2003 International Conference on Compound Semiconductor Manufacturing Technology, Arizona, USA

ER -