Transient Simulations of GaAs MESFETs on Semi-insulating Substrates Compensated by Deep Levels

Y.Fuseya Y.Fuseya, K.Horio K.Horio, Kazushige Horio

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	66-67
Journal	Technical Digest of 1991 International Workshop on VLSI Process and Device Modeling, Oiso, Japan
Publication status	Published - 1991 May 1

Cite this

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title = "Transient Simulations of GaAs MESFETs on Semi-insulating Substrates Compensated by Deep Levels",

author = "Y.Fuseya Y.Fuseya and K.Horio K.Horio and Kazushige Horio",

year = "1991",

month = may,

day = "1",

language = "English",

pages = "66--67",

journal = "Technical Digest of 1991 International Workshop on VLSI Process and Device Modeling, Oiso, Japan",

}

TY - JOUR

T1 - Transient Simulations of GaAs MESFETs on Semi-insulating Substrates Compensated by Deep Levels

AU - Y.Fuseya, Y.Fuseya

AU - K.Horio, K.Horio

AU - Horio, Kazushige

PY - 1991/5/1

Y1 - 1991/5/1

M3 - Article

SP - 66

EP - 67

JO - Technical Digest of 1991 International Workshop on VLSI Process and Device Modeling, Oiso, Japan

JF - Technical Digest of 1991 International Workshop on VLSI Process and Device Modeling, Oiso, Japan

ER -