Two-dimensional analysis of carrier-blocking effect on cutoff frequency characteristics of collector-up AlGaAs/GaAs HBTs

K. Horio; N. Kurosawa

doi:10.1049/el:19980892

Two-dimensional analysis of carrier-blocking effect on cutoff frequency characteristics of collector-up AlGaAs/GaAs HBTs

K. Horio, N. Kurosawa

Research output: Contribution to journal › Article › peer-review

Abstract

Two-dimensional simulation of cutoff frequency (f_T) characteristics in collector-up AlGaAs/GaAs heterojunction bipolar transistors is performed for various collector widths and different base-electrode positions. By putting the base electrode closer to the intrinsic collector, the degradation in f_T resulting from the so-called carrier-blocking effect is shown to be suppressed.

Original language	English
Pages (from-to)	1436-1437
Number of pages	2
Journal	Electronics Letters
Volume	34
Issue number	14
DOIs	https://doi.org/10.1049/el:19980892
Publication status	Published - 1998 Jul 9

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19980892

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title = "Two-dimensional analysis of carrier-blocking effect on cutoff frequency characteristics of collector-up AlGaAs/GaAs HBTs",

abstract = "Two-dimensional simulation of cutoff frequency (fT) characteristics in collector-up AlGaAs/GaAs heterojunction bipolar transistors is performed for various collector widths and different base-electrode positions. By putting the base electrode closer to the intrinsic collector, the degradation in fT resulting from the so-called carrier-blocking effect is shown to be suppressed.",

author = "K. Horio and N. Kurosawa",

year = "1998",

month = jul,

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doi = "10.1049/el:19980892",

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AU - Horio, K.

AU - Kurosawa, N.

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Y1 - 1998/7/9

N2 - Two-dimensional simulation of cutoff frequency (fT) characteristics in collector-up AlGaAs/GaAs heterojunction bipolar transistors is performed for various collector widths and different base-electrode positions. By putting the base electrode closer to the intrinsic collector, the degradation in fT resulting from the so-called carrier-blocking effect is shown to be suppressed.

AB - Two-dimensional simulation of cutoff frequency (fT) characteristics in collector-up AlGaAs/GaAs heterojunction bipolar transistors is performed for various collector widths and different base-electrode positions. By putting the base electrode closer to the intrinsic collector, the degradation in fT resulting from the so-called carrier-blocking effect is shown to be suppressed.

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JO - Electronics Letters

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Two-dimensional analysis of carrier-blocking effect on cutoff frequency characteristics of collector-up AlGaAs/GaAs HBTs

Abstract

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