Two-dimensional analysis of field-plate effects on surface-state-related current transients and power slump in GaAs FETs

Kazushige Horio; Toshiya Tanaka; Keiichi Itagaki; Atsushi Nakajima

doi:10.1109/TED.2010.2094621

Two-dimensional analysis of field-plate effects on surface-state-related current transients and power slump in GaAs FETs

Kazushige Horio, Toshiya Tanaka, Keiichi Itagaki, Atsushi Nakajima

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

In this paper, we carry out a 2-D transient analysis of field-plate GaAs metal-semiconductor field-effect transistors (FETs) by taking surface states into account. Quasi-pulsed currentvoltage curves are derived from the transient characteristics. We show that drain lag and current slump (power slump) due to surface states are reduced by introducing a field plate because the fixed potential at the field plate mitigates the trapping effects of the surface states. The dependence of lag and current slump on the field-plate length and the SiO₂ passivation layer thickness is also studied. We show that it is possible to reduce the current slump and maintain the high-frequency performance of GaAs FETs at optimum values of the field-plate length and the SiO₂ layer thickness.

Original language	English
Article number	5667052
Pages (from-to)	698-703
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	3
DOIs	https://doi.org/10.1109/TED.2010.2094621
Publication status	Published - 2011 Mar
Externally published	Yes

Keywords

Drain lag
GaAs field-effect transistor (FET)
gate lag
power slump
surface state

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2010.2094621

Cite this

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abstract = "In this paper, we carry out a 2-D transient analysis of field-plate GaAs metal-semiconductor field-effect transistors (FETs) by taking surface states into account. Quasi-pulsed currentvoltage curves are derived from the transient characteristics. We show that drain lag and current slump (power slump) due to surface states are reduced by introducing a field plate because the fixed potential at the field plate mitigates the trapping effects of the surface states. The dependence of lag and current slump on the field-plate length and the SiO2 passivation layer thickness is also studied. We show that it is possible to reduce the current slump and maintain the high-frequency performance of GaAs FETs at optimum values of the field-plate length and the SiO2 layer thickness.",

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AU - Itagaki, Keiichi

AU - Nakajima, Atsushi

PY - 2011/3

Y1 - 2011/3

N2 - In this paper, we carry out a 2-D transient analysis of field-plate GaAs metal-semiconductor field-effect transistors (FETs) by taking surface states into account. Quasi-pulsed currentvoltage curves are derived from the transient characteristics. We show that drain lag and current slump (power slump) due to surface states are reduced by introducing a field plate because the fixed potential at the field plate mitigates the trapping effects of the surface states. The dependence of lag and current slump on the field-plate length and the SiO2 passivation layer thickness is also studied. We show that it is possible to reduce the current slump and maintain the high-frequency performance of GaAs FETs at optimum values of the field-plate length and the SiO2 layer thickness.

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KW - power slump

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Two-dimensional analysis of field-plate effects on surface-state-related current transients and power slump in GaAs FETs

Abstract

Keywords

ASJC Scopus subject areas

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