Two-Dimensional Analysis of GaAs MESFET’s with a p-Buffer Layer on the Semi-insulating Substrate

K.Horio K.Horio, Y.Fuseya Y.Fuseya, H.Kusuki H.Kusuki, H.Yanai H.Yanai, Kazushige Horio

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	97-107
Journal	Shibaura Institute of Technology
Volume	34
Publication status	Published - 1990 Mar 1

Cite this

@article{c52e062539d44e85ac84735cc249ad89,

title = "Two-Dimensional Analysis of GaAs MESFET{\textquoteright}s with a p-Buffer Layer on the Semi-insulating Substrate",

author = "K.Horio K.Horio and Y.Fuseya Y.Fuseya and H.Kusuki H.Kusuki and H.Yanai H.Yanai and Kazushige Horio",

year = "1990",

month = mar,

day = "1",

language = "English",

volume = "34",

pages = "97--107",

journal = "Shibaura Institute of Technology",

}

TY - JOUR

T1 - Two-Dimensional Analysis of GaAs MESFET’s with a p-Buffer Layer on the Semi-insulating Substrate

AU - K.Horio, K.Horio

AU - Y.Fuseya, Y.Fuseya

AU - H.Kusuki, H.Kusuki

AU - H.Yanai, H.Yanai

AU - Horio, Kazushige

PY - 1990/3/1

Y1 - 1990/3/1

M3 - Article

VL - 34

SP - 97

EP - 107

JO - Shibaura Institute of Technology

JF - Shibaura Institute of Technology

ER -