Two-dimensional analysis of slow current transients and current collapse in GaN FETs with a semi-insulating buffer layer

K.Horio K.Horio, H.Takayanagi H.Takayanagi, H.Nakano H.Nakano, K.Yonemoto K.Yonemoto, Kazushige Horio

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1-9
Journal	Shibaura Institute of Technology
Volume	50
Publication status	Published - 2006 Sept 30

Cite this

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title = "Two-dimensional analysis of slow current transients and current collapse in GaN FETs with a semi-insulating buffer layer",

author = "K.Horio K.Horio and H.Takayanagi H.Takayanagi and H.Nakano H.Nakano and K.Yonemoto K.Yonemoto and Kazushige Horio",

year = "2006",

month = sep,

day = "30",

language = "English",

volume = "50",

pages = "1--9",

journal = "Shibaura Institute of Technology",

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TY - JOUR

T1 - Two-dimensional analysis of slow current transients and current collapse in GaN FETs with a semi-insulating buffer layer

AU - K.Horio, K.Horio

AU - H.Takayanagi, H.Takayanagi

AU - H.Nakano, H.Nakano

AU - K.Yonemoto, K.Yonemoto

AU - Horio, Kazushige

PY - 2006/9/30

Y1 - 2006/9/30

M3 - Article

VL - 50

SP - 1

EP - 9

JO - Shibaura Institute of Technology

JF - Shibaura Institute of Technology

ER -