Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs / GaAs HEMTS

K.Horio K.Horio, A.Wakabayashi A.Wakabayashi, N.Kurosawa N.Kurosawa, Kazushige Horio

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	339-342
Journal	Institute of Physics Conference Series
Volume	Vol.166
Publication status	Published - 2000 Apr 1

Cite this

@article{6702fc60762543628ec1b41962a30e1f,

title = "Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs / GaAs HEMTS",

author = "K.Horio K.Horio and A.Wakabayashi A.Wakabayashi and N.Kurosawa N.Kurosawa and Kazushige Horio",

year = "2000",

month = apr,

day = "1",

language = "English",

volume = "Vol.166",

pages = "339--342",

journal = "Institute of Physics Conference Series",

}

TY - JOUR

T1 - Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs / GaAs HEMTS

AU - K.Horio, K.Horio

AU - A.Wakabayashi, A.Wakabayashi

AU - N.Kurosawa, N.Kurosawa

AU - Horio, Kazushige

PY - 2000/4/1

Y1 - 2000/4/1

M3 - Article

VL - Vol.166

SP - 339

EP - 342

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

ER -