Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs/GaAs HEMTs

K.Horio K.Horio, A.Wakabayashi A.Wakabayashi, N.Kurosawa N.Kurosawa, Kazushige Horio

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	339-342
Journal	Proceedings of ISCS'99, Berlin, Germany
Publication status	Published - 1999 Aug 1

Cite this

@article{74f81d935adc4f798837d29354ab1e89,

title = "Two-Dimensional Simulation of Gate-Lag Phenomena in GaAs MESFETs and AlGaAs/GaAs HEMTs",

author = "K.Horio K.Horio and A.Wakabayashi A.Wakabayashi and N.Kurosawa N.Kurosawa and Kazushige Horio",

year = "1999",

month = aug,

day = "1",

language = "English",

pages = "339--342",

journal = "Proceedings of ISCS'99, Berlin, Germany",

}