Two-dimensional simulations of cutoff frequency characteristics for algaas/gaas hbts with planar structures

K. Horio; A. Nakatani

doi:10.1108/eb051808

Two-dimensional simulations of cutoff frequency characteristics for algaas/gaas hbts with planar structures

K. Horio, A. Nakatani

Research output: Contribution to journal › Review article › peer-review

Abstract

Cutoff frequency Jr characteristics for AlGaAs/GaAs HBTs with planar structures are studied, by two-dimensional simulation, with an emphasis placed on their dependences on the collector parameters. It is shown that the sub-collector resistance becomes an important factor to achieve a higher f_Tin the high current region, and so it should be made as low as possible. Effects of introducing semi-insulating external collectors are also studied. It is shown that the introduction of semi-insulating layer is effective to improve the f_Tcharacteristics provided that it is slightly away from the intrinsic collector region.

Original language	English
Pages (from-to)	331-340
Number of pages	10
Journal	COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
Volume	12
Issue number	4
DOIs	https://doi.org/10.1108/eb051808
Publication status	Published - 1993 Apr 1

ASJC Scopus subject areas

Computer Science Applications
Computational Theory and Mathematics
Electrical and Electronic Engineering
Applied Mathematics

Access to Document

10.1108/eb051808

Cite this

@article{30d20622908b438a8b7f7adadf2dcfbc,

title = "Two-dimensional simulations of cutoff frequency characteristics for algaas/gaas hbts with planar structures",

abstract = "Cutoff frequency Jr characteristics for AlGaAs/GaAs HBTs with planar structures are studied, by two-dimensional simulation, with an emphasis placed on their dependences on the collector parameters. It is shown that the sub-collector resistance becomes an important factor to achieve a higher fTin the high current region, and so it should be made as low as possible. Effects of introducing semi-insulating external collectors are also studied. It is shown that the introduction of semi-insulating layer is effective to improve the fTcharacteristics provided that it is slightly away from the intrinsic collector region.",

author = "K. Horio and A. Nakatani",

year = "1993",

month = apr,

day = "1",

doi = "10.1108/eb051808",

language = "English",

volume = "12",

pages = "331--340",

journal = "COMPEL - The international journal for computation and mathematics in electrical and electronic engineering",

issn = "0332-1649",

publisher = "Emerald Group Publishing Ltd.",

number = "4",

}

TY - JOUR

T1 - Two-dimensional simulations of cutoff frequency characteristics for algaas/gaas hbts with planar structures

AU - Horio, K.

AU - Nakatani, A.

PY - 1993/4/1

Y1 - 1993/4/1

N2 - Cutoff frequency Jr characteristics for AlGaAs/GaAs HBTs with planar structures are studied, by two-dimensional simulation, with an emphasis placed on their dependences on the collector parameters. It is shown that the sub-collector resistance becomes an important factor to achieve a higher fTin the high current region, and so it should be made as low as possible. Effects of introducing semi-insulating external collectors are also studied. It is shown that the introduction of semi-insulating layer is effective to improve the fTcharacteristics provided that it is slightly away from the intrinsic collector region.

AB - Cutoff frequency Jr characteristics for AlGaAs/GaAs HBTs with planar structures are studied, by two-dimensional simulation, with an emphasis placed on their dependences on the collector parameters. It is shown that the sub-collector resistance becomes an important factor to achieve a higher fTin the high current region, and so it should be made as low as possible. Effects of introducing semi-insulating external collectors are also studied. It is shown that the introduction of semi-insulating layer is effective to improve the fTcharacteristics provided that it is slightly away from the intrinsic collector region.

UR - http://www.scopus.com/inward/record.url?scp=0027887865&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027887865&partnerID=8YFLogxK

U2 - 10.1108/eb051808

DO - 10.1108/eb051808

M3 - Review article

AN - SCOPUS:0027887865

SN - 0332-1649

VL - 12

SP - 331

EP - 340

JO - COMPEL - The international journal for computation and mathematics in electrical and electronic engineering

JF - COMPEL - The international journal for computation and mathematics in electrical and electronic engineering

IS - 4

ER -

Two-dimensional simulations of cutoff frequency characteristics for algaas/gaas hbts with planar structures

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this