Two-Dimensional Transient Simulations of GaAs MESFETs with Semi-insulating Substrates Compensated by Deep Levels

K. Horio, Y. Fuseya

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	410-413
Journal	Proceedings of International Symposium on Signals, Systems and Electronics(ISSSE’92), Paris, France
Publication status	Published - 1992 Sept 1

Cite this

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title = "Two-Dimensional Transient Simulations of GaAs MESFETs with Semi-insulating Substrates Compensated by Deep Levels",

author = "K. Horio and Y. Fuseya",

year = "1992",

month = sep,

day = "1",

language = "English",

pages = "410--413",

journal = "Proceedings of International Symposium on Signals, Systems and Electronics(ISSSE{\textquoteright}92), Paris, France",

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T1 - Two-Dimensional Transient Simulations of GaAs MESFETs with Semi-insulating Substrates Compensated by Deep Levels

AU - Horio, K.

AU - Fuseya, Y.

PY - 1992/9/1

Y1 - 1992/9/1

M3 - Article

SP - 410

EP - 413

JO - Proceedings of International Symposium on Signals, Systems and Electronics(ISSSE’92), Paris, France

JF - Proceedings of International Symposium on Signals, Systems and Electronics(ISSSE’92), Paris, France

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