Uniform (111) textured Cu CVD on vacuum annealed Cu seed layer

K. Ueno; A. Sekiguchi; A. Kobayashi

doi:10.1109/IITC.1998.704768

Uniform (111) textured Cu CVD on vacuum annealed Cu seed layer

K. Ueno, A. Sekiguchi, A. Kobayashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The vacuum anneal effects of the Cu seed on Cu CVD have been investigated. The vacuum anneal removes the surface oxide of the air-exposed Cu seed and enhances the (111) texture of the seed. The incubation period which has been observed with the air-exposed Cu seed has been eliminated by the vacuum anneal and better film morphology and improved sheet resistance uniformity has been obtained. Epitaxial CVD has been observed on the vacuum annealed seed and led to the enhanced (111) texture.

Original language	English
Title of host publication	Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	119-121
Number of pages	3
ISBN (Electronic)	0780342852, 9780780342859
DOIs	https://doi.org/10.1109/IITC.1998.704768
Publication status	Published - 1998
Externally published	Yes
Event	1998 IEEE International Interconnect Technology Conference, IITC 1998 - San Firancisco, United States Duration: 1998 Jun 1 → 1998 Jun 3

Publication series

Name	Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998
Volume	1998-June

Other

Other	1998 IEEE International Interconnect Technology Conference, IITC 1998
Country/Territory	United States
City	San Firancisco
Period	98/6/1 → 98/6/3

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/IITC.1998.704768

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Ueno, K., Sekiguchi, A., & Kobayashi, A. (1998). Uniform (111) textured Cu CVD on vacuum annealed Cu seed layer. In Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998 (pp. 119-121). (Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998; Vol. 1998-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC.1998.704768

Uniform (111) textured Cu CVD on vacuum annealed Cu seed layer. / Ueno, K.; Sekiguchi, A.; Kobayashi, A.

Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998. Institute of Electrical and Electronics Engineers Inc., 1998. p. 119-121 (Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998; Vol. 1998-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ueno, K, Sekiguchi, A & Kobayashi, A 1998, Uniform (111) textured Cu CVD on vacuum annealed Cu seed layer. in Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998. Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998, vol. 1998-June, Institute of Electrical and Electronics Engineers Inc., pp. 119-121, 1998 IEEE International Interconnect Technology Conference, IITC 1998, San Firancisco, United States, 98/6/1. https://doi.org/10.1109/IITC.1998.704768

Ueno K, Sekiguchi A, Kobayashi A. Uniform (111) textured Cu CVD on vacuum annealed Cu seed layer. In Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998. Institute of Electrical and Electronics Engineers Inc. 1998. p. 119-121. (Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998). doi: 10.1109/IITC.1998.704768

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AB - The vacuum anneal effects of the Cu seed on Cu CVD have been investigated. The vacuum anneal removes the surface oxide of the air-exposed Cu seed and enhances the (111) texture of the seed. The incubation period which has been observed with the air-exposed Cu seed has been eliminated by the vacuum anneal and better film morphology and improved sheet resistance uniformity has been obtained. Epitaxial CVD has been observed on the vacuum annealed seed and led to the enhanced (111) texture.

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Uniform (111) textured Cu CVD on vacuum annealed Cu seed layer

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