V-band MMIC LNA using superlattice-inserted InP heterojunction FETS

A. Fujihara; H. Miyamoto; K. Yamanoguchi; E. Mizuki; N. Samoto; S. Tanaka

V-band MMIC LNA using superlattice-inserted InP heterojunction FETS

A. Fujihara, H. Miyamoto, K. Yamanoguchi, E. Mizuki, N. Samoto, S. Tanaka

Research output: Contribution to conference › Paper › peer-review

Abstract

This paper presents a V-band MMIC low-noise amplifier (LNA) using InP-based heterojunction FETs (HJFETs). While the HJFET utilizes an AlAs/InAs superlattice as well as non-alloyed ohmic contacts for improved reliability, we show that with appropriate epitaxial layer design these device structures do not lead to increase in the source resistance. The three-stage coplanar waveguide circuit design demonstrated a state-of-the-art noise figure of 2.0 dB with 22.1dB gain at 60 GHz.

Original language	English
Pages	622-625
Number of pages	4
Publication status	Published - 2001 Jan 1
Externally published	Yes
Event	2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan Duration: 2001 May 14 → 2001 May 18

Conference

Conference	2001 International Conference on Indium Phosphide and Related Materials
Country/Territory	Japan
City	Nara
Period	01/5/14 → 01/5/18

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "V-band MMIC LNA using superlattice-inserted InP heterojunction FETS",

abstract = "This paper presents a V-band MMIC low-noise amplifier (LNA) using InP-based heterojunction FETs (HJFETs). While the HJFET utilizes an AlAs/InAs superlattice as well as non-alloyed ohmic contacts for improved reliability, we show that with appropriate epitaxial layer design these device structures do not lead to increase in the source resistance. The three-stage coplanar waveguide circuit design demonstrated a state-of-the-art noise figure of 2.0 dB with 22.1dB gain at 60 GHz.",

author = "A. Fujihara and H. Miyamoto and K. Yamanoguchi and E. Mizuki and N. Samoto and S. Tanaka",

year = "2001",

month = jan,

day = "1",

language = "English",

pages = "622--625",

note = "2001 International Conference on Indium Phosphide and Related Materials ; Conference date: 14-05-2001 Through 18-05-2001",

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TY - CONF

T1 - V-band MMIC LNA using superlattice-inserted InP heterojunction FETS

AU - Fujihara, A.

AU - Miyamoto, H.

AU - Yamanoguchi, K.

AU - Mizuki, E.

AU - Samoto, N.

AU - Tanaka, S.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - This paper presents a V-band MMIC low-noise amplifier (LNA) using InP-based heterojunction FETs (HJFETs). While the HJFET utilizes an AlAs/InAs superlattice as well as non-alloyed ohmic contacts for improved reliability, we show that with appropriate epitaxial layer design these device structures do not lead to increase in the source resistance. The three-stage coplanar waveguide circuit design demonstrated a state-of-the-art noise figure of 2.0 dB with 22.1dB gain at 60 GHz.

AB - This paper presents a V-band MMIC low-noise amplifier (LNA) using InP-based heterojunction FETs (HJFETs). While the HJFET utilizes an AlAs/InAs superlattice as well as non-alloyed ohmic contacts for improved reliability, we show that with appropriate epitaxial layer design these device structures do not lead to increase in the source resistance. The three-stage coplanar waveguide circuit design demonstrated a state-of-the-art noise figure of 2.0 dB with 22.1dB gain at 60 GHz.

UR - http://www.scopus.com/inward/record.url?scp=0034846225&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034846225&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034846225

SP - 622

EP - 625

T2 - 2001 International Conference on Indium Phosphide and Related Materials

Y2 - 14 May 2001 through 18 May 2001

ER -

V-band MMIC LNA using superlattice-inserted InP heterojunction FETS

Abstract

Conference

ASJC Scopus subject areas

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