Valence-Band Discontinuity at the AIN/Si Interface

Hiroyasu Ishikawa; Baijun Zhang; Takashi Egawa; Takashi Jimbo

doi:10.1143/jjap.42.6413

Valence-Band Discontinuity at the AIN/Si Interface

Hiroyasu Ishikawa, Baijun Zhang, Takashi Egawa, Takashi Jimbo

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

The major problems of GaN-based light-emitting diodes on Si are their high series resistances and high operating voltages due to the large band discontinuity at the AlN/Si interface. We have observed the valence-band discontinuity at the AlN/Si interface using X-ray photoelectron spectroscopy (XPS). The valence- and conduction-band discontinuity values at the AlN/Si interface were found to be 2.8 ± 0.4 eV and 2.3 ± 0.4 eV, respectively.

Original language	English
Pages (from-to)	6413-6414
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	10
DOIs	https://doi.org/10.1143/jjap.42.6413
Publication status	Published - 2003 Oct
Externally published	Yes

Keywords

AIN
Band discontinuity
GaN
MOCVD
Si

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.42.6413

Cite this

@article{bef211dc4e1e433fb79fe22216bec5ec,

title = "Valence-Band Discontinuity at the AIN/Si Interface",

abstract = "The major problems of GaN-based light-emitting diodes on Si are their high series resistances and high operating voltages due to the large band discontinuity at the AlN/Si interface. We have observed the valence-band discontinuity at the AlN/Si interface using X-ray photoelectron spectroscopy (XPS). The valence- and conduction-band discontinuity values at the AlN/Si interface were found to be 2.8 ± 0.4 eV and 2.3 ± 0.4 eV, respectively.",

keywords = "AIN, Band discontinuity, GaN, MOCVD, Si",

author = "Hiroyasu Ishikawa and Baijun Zhang and Takashi Egawa and Takashi Jimbo",

year = "2003",

month = oct,

doi = "10.1143/jjap.42.6413",

language = "English",

volume = "42",

pages = "6413--6414",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10",

}

TY - JOUR

T1 - Valence-Band Discontinuity at the AIN/Si Interface

AU - Ishikawa, Hiroyasu

AU - Zhang, Baijun

AU - Egawa, Takashi

AU - Jimbo, Takashi

PY - 2003/10

Y1 - 2003/10

N2 - The major problems of GaN-based light-emitting diodes on Si are their high series resistances and high operating voltages due to the large band discontinuity at the AlN/Si interface. We have observed the valence-band discontinuity at the AlN/Si interface using X-ray photoelectron spectroscopy (XPS). The valence- and conduction-band discontinuity values at the AlN/Si interface were found to be 2.8 ± 0.4 eV and 2.3 ± 0.4 eV, respectively.

AB - The major problems of GaN-based light-emitting diodes on Si are their high series resistances and high operating voltages due to the large band discontinuity at the AlN/Si interface. We have observed the valence-band discontinuity at the AlN/Si interface using X-ray photoelectron spectroscopy (XPS). The valence- and conduction-band discontinuity values at the AlN/Si interface were found to be 2.8 ± 0.4 eV and 2.3 ± 0.4 eV, respectively.

KW - AIN

KW - Band discontinuity

KW - GaN

KW - MOCVD

KW - Si

UR - http://www.scopus.com/inward/record.url?scp=0348220488&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0348220488&partnerID=8YFLogxK

U2 - 10.1143/jjap.42.6413

DO - 10.1143/jjap.42.6413

M3 - Article

AN - SCOPUS:0348220488

SN - 0021-4922

VL - 42

SP - 6413

EP - 6414

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 10

ER -

Valence-Band Discontinuity at the AIN/Si Interface

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this