Very wide-tuning range 5-GHz-band Si bipolar VCO using three-dimensional MMIC technology

Kenji Kamogawa, Kenjiro Nishikawa, Chikara Yamaguchi, Makoto Hirano, Ichihiko Toyoda, Tsuneo Tokumitsu

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


The first completely integrated, wide-tuning range 5-GHz-band 0.5-μm Si bipolar transistor voltage-controlled oscillator (VCO), based on three-dimensional MMIC technology, is presented. A 33% frequency tuning range from 4.02 to 5.35 GHz is obtained at the collector voltage of 3 V because the base-emitter resistance of the active transistor works like a varistor with a large ratio. Furthermore, the oscillation frequency is remarkably linear against the controlled base bias. The achieved phase noise is -108 dBc/H at 1 MHz offset from carrier.

Original languageEnglish
Pages (from-to)1221-1224
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1997 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Denver, CO, USA
Duration: 1997 Jun 81997 Jun 13

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Very wide-tuning range 5-GHz-band Si bipolar VCO using three-dimensional MMIC technology'. Together they form a unique fingerprint.

Cite this