Wafer surface treatment for integrating laser diode and optical isolator by direct bonding

T. Mizumoto; H. Yokoi; M. Shimizu; T. Waniishi; N. Futakuchi; N. Kaida; Y. Nakano

doi:10.1109/APCC.1999.820618

Wafer surface treatment for integrating laser diode and optical isolator by direct bonding

T. Mizumoto, H. Yokoi, M. Shimizu, T. Waniishi, N. Futakuchi, N. Kaida, Y. Nakano

Research output: Contribution to conference › Paper › peer-review

Abstract

GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding. Wafer direct bonding was successfully achieved between O₂ plasma activated GaInAsP and garnet crystals.

Original language	English
Pages	1662-1664
Number of pages	3
DOIs	https://doi.org/10.1109/APCC.1999.820618
Publication status	Published - 1998
Externally published	Yes
Event	5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999 - Beijing, China Duration: 1999 Oct 18 → 1999 Oct 22

Other

Other	5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999
Country/Territory	China
City	Beijing
Period	99/10/18 → 99/10/22

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Communication
Computer Networks and Communications

Access to Document

10.1109/APCC.1999.820618

Cite this

Mizumoto, T., Yokoi, H., Shimizu, M., Waniishi, T., Futakuchi, N., Kaida, N., & Nakano, Y. (1998). Wafer surface treatment for integrating laser diode and optical isolator by direct bonding. 1662-1664. Paper presented at 5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999, Beijing, China. https://doi.org/10.1109/APCC.1999.820618

Mizumoto, T, Yokoi, H, Shimizu, M, Waniishi, T, Futakuchi, N, Kaida, N & Nakano, Y 1998, 'Wafer surface treatment for integrating laser diode and optical isolator by direct bonding', Paper presented at 5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999, Beijing, China, 99/10/18 - 99/10/22 pp. 1662-1664. https://doi.org/10.1109/APCC.1999.820618

@conference{1b8bd729c1c340e5ba269e78a898038c,

title = "Wafer surface treatment for integrating laser diode and optical isolator by direct bonding",

abstract = "GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding. Wafer direct bonding was successfully achieved between O2 plasma activated GaInAsP and garnet crystals.",

author = "T. Mizumoto and H. Yokoi and M. Shimizu and T. Waniishi and N. Futakuchi and N. Kaida and Y. Nakano",

note = "Funding Information: The authors would like to thank to Dr. Naito, Professor Emeritus, for continuous encouragement. This work was partially supported by Exploratory Research on Novel Artificial Materials and Substances for Next-Generation Industries, Research fbr the Future from Japan Society for the Promotion of Sciences (JSPS-RFTF97P00103). Publisher Copyright: {\textcopyright} 1999 China Inst. Of Communications.; 5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999 ; Conference date: 18-10-1999 Through 22-10-1999",

year = "1998",

doi = "10.1109/APCC.1999.820618",

language = "English",

pages = "1662--1664",

}

TY - CONF

T1 - Wafer surface treatment for integrating laser diode and optical isolator by direct bonding

AU - Mizumoto, T.

AU - Yokoi, H.

AU - Shimizu, M.

AU - Waniishi, T.

AU - Futakuchi, N.

AU - Kaida, N.

AU - Nakano, Y.

N1 - Funding Information: The authors would like to thank to Dr. Naito, Professor Emeritus, for continuous encouragement. This work was partially supported by Exploratory Research on Novel Artificial Materials and Substances for Next-Generation Industries, Research fbr the Future from Japan Society for the Promotion of Sciences (JSPS-RFTF97P00103). Publisher Copyright: © 1999 China Inst. Of Communications.

PY - 1998

Y1 - 1998

N2 - GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding. Wafer direct bonding was successfully achieved between O2 plasma activated GaInAsP and garnet crystals.

AB - GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding. Wafer direct bonding was successfully achieved between O2 plasma activated GaInAsP and garnet crystals.

UR - http://www.scopus.com/inward/record.url?scp=85049798835&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85049798835&partnerID=8YFLogxK

U2 - 10.1109/APCC.1999.820618

DO - 10.1109/APCC.1999.820618

M3 - Paper

AN - SCOPUS:85049798835

SP - 1662

EP - 1664

T2 - 5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999

Y2 - 18 October 1999 through 22 October 1999

ER -

Wafer surface treatment for integrating laser diode and optical isolator by direct bonding

Abstract

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