TY - GEN
T1 - Wideband and high-isolation properties of power bus structure by the combination of thin-film embedded capacitor and planar EBG structure
AU - Sudo, Toshio
AU - Ichijo, Seiju
AU - Kushihira, Takanobu
PY - 2007/10/22
Y1 - 2007/10/22
N2 - Power bus structure in a printed circuit board (PCB) is an influential design parameter in mitigating power/ground fluctuation and radiated emission for high-speed digital circuits. The power bus is ordinarily composed of two solid planes separated by dielectric insulator in a multilayer PCB. Recently, it has been reported that an electromagnetic bandgap (EBG)-type VDD plane is effective for suppressing radiated emission for mixed-signal applications or high-speed digital applications. However, the EBG-type VDD plane often induces large power/ground bounce due to the return current discontinuity. On the other hand, the solid-type VDD and ground plane with a thinner dielectric insulator makes wide band property of the power supply impedance by eliminating the power/ground resonances. However, even adopting an insulator thickness of 16 um, the S21 property was still around -50 dB or so. In the present work, the power bus structure with wideband and high isolation properties of around -80 dB or more has been explored by the combination of thin-film insulator and planar EBG structure.
AB - Power bus structure in a printed circuit board (PCB) is an influential design parameter in mitigating power/ground fluctuation and radiated emission for high-speed digital circuits. The power bus is ordinarily composed of two solid planes separated by dielectric insulator in a multilayer PCB. Recently, it has been reported that an electromagnetic bandgap (EBG)-type VDD plane is effective for suppressing radiated emission for mixed-signal applications or high-speed digital applications. However, the EBG-type VDD plane often induces large power/ground bounce due to the return current discontinuity. On the other hand, the solid-type VDD and ground plane with a thinner dielectric insulator makes wide band property of the power supply impedance by eliminating the power/ground resonances. However, even adopting an insulator thickness of 16 um, the S21 property was still around -50 dB or so. In the present work, the power bus structure with wideband and high isolation properties of around -80 dB or more has been explored by the combination of thin-film insulator and planar EBG structure.
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U2 - 10.1109/ECTC.2007.373948
DO - 10.1109/ECTC.2007.373948
M3 - Conference contribution
AN - SCOPUS:35348839526
SN - 1424409853
SN - 9781424409853
T3 - Proceedings - Electronic Components and Technology Conference
SP - 1212
EP - 1217
BT - Proceedings - 57th Electronic Components and Technology Conference 2007, ECTC '07
T2 - 57th Electronic Components and Technology Conference 2007, ECTC '07
Y2 - 29 May 2007 through 1 June 2007
ER -