電気電子情報工学専攻

研究成果

年別の研究成果 1977 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023

• 1159 Conference contribution
• 907 Article
• 113 Paper
• 90 Conference article
• 64 その他
  • 27 Chapter
  • 20 Editorial
  • 10 Review article
  • 4 Comment/debate
  • 2 Letter
  • 1 Foreword/postscript

年別の研究成果

年別の研究成果

検索結果

• 1989

  Numerical Simulation of AlGaAs/GaAs Heterojunction Bipolar Transi stors Design Critenia for n-Collecor Layer-

  K.Horio, K. H., Y.Ikoma, Y. I., H.Yanai, H. Y. & Horio, K., 1989 3月 1, In: Shibaura Institute of Technology. 33, p. 27-35

  研究成果: Article › 査読

• Numerical Simulation of GaAs MESFET’s with a p-Buffer Layer on the Semi-insulating Substrate Compensated by Deep Traps

  K.Horio, K. H., Y.Fuseya, Y. F., H.Kusuki, H. K., H.Yanai, H. Y. & Horio, K., 1989 9月 1, In: IEEE Trans.Microwave Theory Tech.. 37, p. 1371-1379

  研究成果: Article › 査読

• Some Specific Problems Related to Numerical Modeling of - Compound Semiconductor Devices

  K.Horio, K. H., H.Yanai, H. Y. & Horio, K., 1989 3月 1, In: Report of Research Laboratory of Engineering. p. 1-33

  研究成果: Article › 査読
• 1990

  Effects of Substrate Properties on Small-Signal Parameters of GaAs MESFET’s

  K.Horio, K. H., Y.Fuseya, Y. F., H.Kusuki, H. K., H.Yanai, H. Y. & Horio, K., 1990 9月 1, In: The 3rd Asia-Pacific Microwave Conference Proceedings, Tokyo, Japan. p. 963-966

  研究成果: Article › 査読

• Numerical Modeling of Heterojunctions Including Thermionic Emission Mechanism at the Heterojunction Interface

  K.Horio, K. H., H.Yanai, H. Y. & Horio, K., 1990 4月 1, In: IEEE Trans.Electron Devices. 37, p. 1093-1098

  研究成果: Article › 査読

  114 被引用数 (Scopus)

• Numerical Modeling of Heterojunctions Including the Thermionic Emission Mechanism at the Heterojunction Interface

  Horio, K. & Yanai, H., 1990 4月, In: IEEE Transactions on Electron Devices. 37, 4, p. 1093-1098 6 p.

  研究成果: Article › 査読

  • Thermionic emission 100%
  • Thermionic Emission 91%
  • Heterojunctions 73%
  • Numerical models 45%
  • Diffusion 17%
  95 被引用数 (Scopus)

• One-Carrier Numerical Model for GaAs MESFET’s(with p-Buffer Layer) on the Semi-insulating Substrate Including Deep Levels

  K.Horio, K. H., Y.Fuseya, Y. F., H.Kusuki, H. K., H.Yanai, H. Y. & Horio, K., 1990 4月 1, In: Trans. IEICE. 73, p. 506-509

  研究成果: Article › 査読

• Simplified Simulation of GaAs MESFETs with Semi-insulating Substrates Compensated by Deep Levels

  K.Horio, K. H., Y.Fuseya, Y. F., H.Kusuki, H. K., H.Yanai, H. Y. & Horio, K., 1990 6月 1, In: Proceedings of IEEE NUPAD III Conference, Hawaii, USA. p. 41-42

  研究成果: Article › 査読

• Two-Dimensional Analysis of GaAs MESFET’s with a p-Buffer Layer on the Semi-insulating Substrate

  K.Horio, K. H., Y.Fuseya, Y. F., H.Kusuki, H. K., H.Yanai, H. Y. & Horio, K., 1990 3月 1, In: Shibaura Institute of Technology. 34, p. 97-107

  研究成果: Article › 査読
• 1991

  Simplified Simulations of GaAs MESFET's with Semi-Insulating Substrate Compensated by Deep Levels

  Horio, K., Fuseya, Y., Kusuki, H. & Yanai, H., 1991 10月, In: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 10, 10, p. 1295-1302 8 p.

  研究成果: Article › 査読

  • MESFET devices 100%
  • Substrates 43%
  • Buffer layers 32%
  • Hole traps 15%
  • Current voltage characteristics 10%

• Simplified Simulations of GaAs MESFET’s with Semi-insulating Substrates Compensated by Deep Levels

  K.Horio, K. H., Y.Fuseya, Y. F., H.Kusuki, H. K., H.Yanai, H. Y. & Horio, K., 1991 10月 1, In: IEEE Trans.Computer-Aided Design. 10, p. 1295-1302

  研究成果: Article › 査読

• Small-Signal Parameters of GaAs MESFETs as Affected by Substrate Properties -Computer Simulation-

  K.Horio, K. H., Y.Fuseya, Y. F., H.Kusuki, H. K., H.Yanai, H. Y. & Horio, K., 1991 5月 1, In: IEICE Trans.. 74, p. 1191-1196

  研究成果: Article › 査読

• The Roles of Junctions in Conduction Properties of GaAs n-i-n Structures with a Heavily Compensated i-Layer

  K.Horio, K. H., H.Yanai, H. Y. & Horio, K., 1991 4月 1, In: Proceedings of 7th International Conference on the Numerical Analysis of Semiconductor Devices and ICs, Colorado, USA. p. 202-203

  研究成果: Article › 査読

• Transient Simulations of GaAs MESFETs on Semi-insulating Substrates Compensated by Deep Levels

  Y.Fuseya, Y. F., K.Horio, K. H. & Horio, K., 1991 5月 1, In: Technical Digest of 1991 International Workshop on VLSI Process and Device Modeling, Oiso, Japan. p. 66-67

  研究成果: Article › 査読

• Two-dimensional analysis of high injection effects in AlGaAs/GaAs HBTs with semi-insulating external collectors

  Horio, K., Oguchi, A. & Yanais, H., 1991 12月, In: Solid State Electronics. 34, 12, p. 1393-1400 8 p.

  研究成果: Article › 査読

  • Electron Transport 100%
  • Heterojunction bipolar transistors 74%
  • dimensional analysis 73%
  • Cutoff frequency 72%
  • accumulators 61%
  1 被引用数 (Scopus)

• Two-Dimensional Simulation of AlGaAs/GaAs HBTs with Various Collector Structures

  K.Horio, K. H., A.Oguchi, A. O., H.Yanai, H. Y. & Horio, K., 1991 9月 1, In: Proceedings of the 4th International Conference on Simulation of Semiconductor Devices and Processes, Zurich, Switzerland. p. 81-90

  研究成果: Article › 査読

• Two-dimensional simulation of GaAs MESFETs with deep acceptors in the semi-insulating substrate

  Horio, K., Asada, K. & Yanai, H., 1991 4月, In: Solid State Electronics. 34, 4, p. 335-343 9 p.

  研究成果: Article › 査読

  • Deep Donor 100%
  • Shallow Acceptor 97%
  • field effect transistors 43%
  • Substrates 38%
  • Simulation 34%
  29 被引用数 (Scopus)

• Upgrade of Passive Optical Subscriber Network

  Kashima, N., 1991 1月 1, In: Journal of Lightwave Technology. 9, 1, p. 113-120 8 p.

  研究成果: Article › 査読

  • tunable lasers 100%
  • wavelengths 89%
  • narrowband 86%
  • time division multiple access 77%
  • broadband 66%
  6 被引用数 (Scopus)
• 1992

  Analysis of Laser Diodes as Transmitter and Preamplifiers in Time Compression Multiplexing Systems

  Kashirna, N., 1992 3月, In: Journal of Lightwave Technology. 10, 3, p. 323-329 7 p.

  研究成果: Article › 査読

  • preamplifiers 100%
  • transmitters 83%
  • multiplexing 82%
  • semiconductor lasers 65%
  • lasers 37%
  1 被引用数 (Scopus)

• Computer-Aided Analysis of GaAs MESFETs with p-Buffer Layer on the Semi-insulating Substrate

  Horio, K. & Okumura, N., 1992 10月 1, In: IEICE Transactions on Electronics. 75, p. 1140-1145

  研究成果: Article › 査読

• Effects of Impact Ionization on - Characteristics of GaAs n-i-n Structures Including Hole Trap

  Horio, K. & Kusuki, H., 1992 10月 1, In: IEEE Electron Device Letters. 13, p. 541-543

  研究成果: Article › 査読

• Effects of Impact Ionization on I-V Characteristics of GaAs n-i-n Structures Including Hole Trap

  Horio, K. & Kusuki, H., 1992 10月, In: IEEE Electron Device Letters. 13, 10, p. 541-543 3 p.

  研究成果: Article › 査読

  • Hole traps 100%
  • Impact Ionization 89%
  • Hole Trap 80%
  • Impact ionization 78%
  • Voltage 36%

• Numerical Analysis of Trapping Effects on Kink Behavior of GaAs MESFETs

  Horio, K. & Kusuki, H., 1992 5月 1, In: Proceedings of the NASECODE VIII Conference, Vienna, Austria. p. 149-150

  研究成果: Article › 査読

• Numerical simulation of trapping effects on DRAIN-CURRENT transients of gaas mesfets

  Horio, K., 1992 1月, In: Electronics Letters. 28, 3, p. 295-296 2 p.

  研究成果: Article › 査読

  • Drain current 100%
  • Computer simulation 86%

• Simulations of Trapping Effects in GaAs MESFETs and Requirements for Substrates in GaAs MESFET-ICs

  Horio, K. & Fuseya, Y., 1992 10月 1, In: Proceedings of 1992 IEEE GaAs IC Symposium, Florida, USA. p. 241-244

  研究成果: Article › 査読

  16 被引用数 (Scopus)

• The Software Development Environment : dm CASE

  Saeko, M., Masaharu, O. & Matsuura, S., 1992 1月 15, In: Transaction from Transactions of IPSJ. 15, p. 116-128

  研究成果: Article › 査読

• Two-Dimensional Simulations of AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT’s)

  K.Horio, K. H. & Horio, K., 1992 3月 1, In: Report of Research Laboratory of Engineering. p. 1-13

  研究成果: Article › 査読

• Two-Dimensional Transient Simulations of GaAs MESFETs with Semi-insulating Substrates Compensated by Deep Levels

  Horio, K. & Fuseya, Y., 1992 9月 1, In: Proceedings of International Symposium on Signals, Systems and Electronics(ISSSE’92), Paris, France. p. 410-413

  研究成果: Article › 査読
• 1993

  Numerical Simulations of Substrate-Related Kink Effects in GaAs MESFETs

  K.Horio, K. H., K.Satoh, K. S. & Horio, K., 1993 12月 1, In: Proceedings of ISDRS’93, Virginia, USA. p. 97-100

  研究成果: Article › 査読

• Optical cable network operation in subscriber loops

  Kashima, N., Kokubun, T., Sao, M. & Yamamoto, Y., 1993 4月 1, In: IEICE Transactions on Communications. E76-B, 4, p. 391-401 11 p.

  研究成果: Article › 査読

  • Subscriber loops 100%
  • Optical cables 84%
  • Cables 52%
  • Application programs 14%

• Prospective operation technologies for fiber-optic subscriber loops

  Wakui, Y. & Kashima, N., 1993 4月 1, In: IEICE Transactions on Communications. E76-B, 4, p. 329-335 7 p.

  研究成果: Article › 査読

  • Subscriber loops 100%
  • Fiber optics 68%
  • Automation 24%

• Simulation of Kink Behavior in GaAs MESFET with Semi-insulating Substrate

  Horio, K. & Satoh, K., 1993 6月 1, In: Electronics Letters. 29, p. 1128-1130

  研究成果: Article › 査読

• Simulation of kink behaviour in GaAs MESFET with semi-insulating substrate

  Horio, K. & śatoh, K., 1993 6月, In: Electronics Letters. 29, 12, p. 1128-1130 3 p.

  研究成果: Article › 査読

  • Impact ionization 100%
  • Hole traps 63%
  • Charge distribution 46%
  • Substrates 45%
  • Electric space charge 42%

• Simulations of Carrier-Blocking Effects on Cutoff Frequency Characteristics for AlGaAs/GaAs HBTs with Insulating and Semi-insulating External Collectors

  Horio, K. & Nakatani, A., 1993 9月 1, In: Proceedings of SISDEP’93, Vienna, Austria. p. 449-452

  研究成果: Article › 査読

• Software Process Modeling Using Functional Language Miranda

  Saeko, M., Shinichi, H. & Matsuura, S., 1993 11月 17, In: Conference Proceedings of Joint Conference on Software Engineering '93. p. 255-262

  研究成果: Article › 査読

• Two-Dimensional Simulations of Cutoff Frequency Characteristics for AlGaAs/GaAs HBTs with Various Collector Structures

  K.Horio, K. H., A.Nakatani, A. N. & Horio, K., 1993 4月 1, In: Proceedings of the NASECODE IX Conference, Colorado, USA. p. 26-27

  研究成果: Article › 査読

  6 被引用数 (Scopus)

• Two-Dimensional Simulations of GaAs MESFETs Including Impact Ionization of Carriers and Carrier Trapping in the Semi-insulating Substrate

  Horio, K., Satoh, K. & Kusuki, H., 1993 5月 1, In: Proceedings of 1993 VPAD, Nara, Japan. p. 100-101

  研究成果: Article › 査読

• Two‐dimensional analysis of cutoff frequencies of GaAs MESFETS with various substrate conditions (invited article)

  Horio, K., 1993 7月, In: International Journal of Microwave and Millimeter‐Wave Computer‐Aided Engineering. 3, 3, p. 230-237 8 p.

  研究成果: Article › 査読

  • Cutoff frequency 100%
  • Substrates 61%
  • Doping (additives) 32%
  • Impurities 27%
  • Compensation and Redress 22%
• 1994

  An energy transport model for HBTs using energy- and composition-dependent transport parameters

  Horio, K. & Nakatani, A., 1994 4月 1, In: COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering. 13, 4, p. 567-577 11 p.

  研究成果: Article › 査読

  • Energy Transport 100%
  • Heterojunction bipolar transistors 74%
  • Doping (additives) 70%
  • Electron 64%
  • Electrons 63%

• Numerical Simulations of Kink Phenomena and the Related Backgating Effects in GaAs MESFETs

  K.Horio, K. H., K.Usami, K. U., K.Satoh, K. S. & Horio, K., 1994 7月 1, In: Proceedings of EDMS’94, Hsinchu, Taiwan. p. 4.2.5-4.2.8

  研究成果: Article › 査読

• Partial casting method on water surface and preparation of multi-channel saw chemical sensor

  Moriizumi, T., Saitoh, A. & Nomura, T., 1994 6月 1, In: Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals. 247, 1, p. 331-339 9 p.

  研究成果: Article › 査読

  • Nanofilm 100%
  • surface water 99%
  • Acoustic surface wave devices 96%
  • Chemical sensors 94%
  • Surface Water 87%
  1 被引用数 (Scopus)

• RISC-based multichip modules for workstations. Performance comparison among types of MCM

  Okada, T., Yamaji, Y. & Sudo, T., 1994 3月 1, In: International Journal of Microcircuits and Electronic Packaging. 17, 1, p. 62-72 11 p.

  研究成果: Article › 査読

  • Multichip modules 100%
  • Reduced instruction set computing 90%
  • Dissipation 78%
  • Multilayer 64%
  • Reflection 57%
  2 被引用数 (Scopus)

• Two-Dimensional Analysis of Substrate-Related Kink Phenomena in GaAs MESFET’s

  Horio, K., 1994 12月, In: IEEE Transactions on Electron Devices. 41, 12, p. 2256-2261 6 p.

  研究成果: Article › 査読

  • Impact Ionization 100%
  • Drain Current 43%
  • Substrates 39%
  • Space Charge 36%
  • Impact ionization 29%
  15 被引用数 (Scopus)

• Two-Dimensional Simulations of Drain-Current Transients in GaAs MESFET’s with Semi-insulating Substrates Compensated by Deep Levels

  Horio, K., 1994 8月, In: IEEE Transactions on Electron Devices. 41, 8, p. 1340-1346 7 p.

  研究成果: Article › 査読

  • Deep Donor 100%
  • Drain Current 85%
  • Drain current 70%
  • Buffer layers 39%
  • Substrates 38%
  6 被引用数 (Scopus)

• Two-Dimensional Simulations of Drain-Current Transients in GaAs MESFET’s with Semi-insulating Substrates Compensated by Deep Levels

  K.Horio, K. H., Y.Fuseya, Y. F. & Horio, K., 1994 8月 1, In: IEEE Trans. Electron Devices. 41, p. 1340-1346

  研究成果: Article › 査読

  35 被引用数 (Scopus)
• 1995

  Analysis of Carrier-Blocking Effect in AlGaAs/GaAs HBT's with Insulating External Collector and Design Criteria for Collector-Up HBT's

  Horio, K. & Nakatani, A., 1995 11月, In: IEEE Transactions on Electron Devices. 42, 11, p. 1897-1902 6 p.

  研究成果: Article › 査読

  • Heterojunction bipolar transistors 100%
  • Cutoff frequency 97%
  • Simulation 53%
  • Time delay 34%
  • Time 30%

• Analysis of Carrier-Blocking Effect in AlGaAs/GaAs HBT’s with Insulating External Collector and Design Criteria for Collector-Up HBT’s

  K.Horio, K. H., A.Nakatani, A. N. & Horio, K., 1995 11月 1, In: IEEE Trans. Electron Devices. 42, p. 1897-1902

  研究成果: Article › 査読

• Analysis of Kink-Related Backgating Effect in GaAs MESFET

  Horio, K. & Usami, K., 1995 6月, In: IEEE Electron Device Letters. 16, 6, p. 277-279 3 p.

  研究成果: Article › 査読

  • Deep Donor 100%
  • Impact Ionization 97%
  • Impact ionization 86%
  • Substrates 38%
  • Simulation 34%
  6 被引用数 (Scopus)

• Analysis of Kink-Related Backgating Effect in GaAs NESFET

  K.Horio, K. H., K.Usami, K. U. & Horio, K., 1995 6月 1, In: IEEE Electron Device Lett.. 16, p. 277-279

  研究成果: Article › 査読

  2 被引用数 (Scopus)

• Distributed operation system platform for optical cable network using object-oriented software design

  Kashima, N. & Inoue, T., 1995 12月 1, In: IEICE Transactions on Communications. E78-B, 12, p. 1638-1645 8 p.

  研究成果: Article › 査読

  • Optical cables 100%
  • Software design 80%
  • Cables 62%