石川 博康

研究成果

年別の研究成果 1995 1998 2001 2003 2004 2018

• 156 Article
• 14 Conference article
• 6 Letter
• 3 Conference contribution
• 3 その他
  • 3 Paper

年別の研究成果

年別の研究成果

検索結果

• 2004

  GaN-based optoelectronic devices on Si grown by MOCVD

  Ishikawa, H. & Egawa, T., 2004 10月 28, p. 34-38. 5 p.

  研究成果: Paper › 査読

  • Metallorganic chemical vapor deposition 100%
  • Optoelectronic devices 73%
  • Light emitting diodes 62%
  • High electron mobility transistors 36%
  • Substrates 22%
• 2001

  Excellent DC characteristics of HEMTs on semi-insulating silicon carbide substrate

  Arulkumaran, S., Egawa, T., Zhao, G., Ishikawa, H. & Umeno, M., 2001 1月 1, p. 91-92. 2 p.

  研究成果: Paper › 査読

  • High electron mobility transistors 100%
  • Silicon carbide 92%
  • Metallorganic chemical vapor deposition 68%
  • Epitaxial films 65%
  • Substrates 61%
  1 被引用数 (Scopus)

• High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate

  Sano, Y., Yamada, T., Mita, J., Kaifu, K., Ishikawa, H., Egawa, T. & Umeno, M., 2001 1月 1, p. 81-82. 2 p.

  研究成果: Paper › 査読

  • Gates (transistor) 100%
  • Sapphire 93%
  • High electron mobility transistors 81%
  • Substrates 49%
  • Reactive ion etching 23%
  3 被引用数 (Scopus)