石川 博康

研究成果

年別の研究成果 1995 1998 2001 2003 2004 2018

• 156 Article
• 14 Conference article
• 6 Letter
• 3 Conference contribution
• 3 その他
  • 3 Paper

年別の研究成果

年別の研究成果

検索結果

• Zn ion implantation along the c axis for formation of highly resistive GaN layers

  Oishi, T., Miura, N., Suita, M., Nanjo, T., Abe, Y., Ozeki, T., Ishikawa, H. & Egawa, T., 2004, In: Shinku/Journal of the Vacuum Society of Japan. 47, 4, p. 328-333 6 p.

  研究成果: Article › 査読

  Open Access

  • Ion implantation 100%
  • Ion Implantation 90%
  • Ions 68%
  • ion implantation 67%
  • Energy transfer 42%

• Visible-blind metal-semiconductor-metal photodetectors based on undoped AlGaN/GaN high electron mobility transistor structure

  Jiang, H., Egawa, T., Ishikawa, H., Shao, C. & Jimbo, T., 2004 5月 15, In: Japanese Journal of Applied Physics, Part 2: Letters. 43, 5 B, p. L683-L685

  研究成果: Article › 査読

  • Photodetectors 100%
  • High electron mobility transistors 89%
  • high electron mobility transistors 79%
  • photometers 68%
  • Semiconductor materials 68%
  22 被引用数 (Scopus)

• Valence Band Discontinuity at the AlN/Si Interface

  Ishikawa, H., Zhang, B., Egawa, T. & T.Jimbo, T. J., 2003 10月 1, In: Jpn. J. Appl. Phys.. 42, p. 6413-6414

  研究成果: Article › 査読

  22 被引用数 (Scopus)

• Valence-Band Discontinuity at the AIN/Si Interface

  Ishikawa, H., Zhang, B., Egawa, T. & Jimbo, T., 2003 10月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42, 10, p. 6413-6414 2 p.

  研究成果: Article › 査読

  Open Access

  • Valence bands 100%
  • discontinuity 49%
  • Conduction bands 47%
  • valence 40%
  • X ray photoelectron spectroscopy 33%
  18 被引用数 (Scopus)

• Three growth-temperature-dependent regions for nitrogen incorporation in GaNAs grown by chemical beam epitaxy

  Sun, Y., Yamamori, M., Egawa, T. & Ishikawa, H., 2004 5月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 5 A, p. 2409-2413 5 p.

  研究成果: Article › 査読

  • Chemical beam epitaxy 100%
  • Growth temperature 88%
  • epitaxy 54%
  • Nitrogen 50%
  • nitrogen 40%
  13 被引用数 (Scopus)

• Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off

  Zhang, B., Egawa, T., Ishikawa, H., Liu, Y. & Jimbo, T., 2005 2月 14, In: Applied Physics Letters. 86, 7, p. 1-3 3 p., 071113.

  研究成果: Article › 査読

  • light emitting diodes 100%
  • quantum wells 96%
  • copper 89%
  • thin films 64%
  • metal bonding 28%
  30 被引用数 (Scopus)

• Thermo-optical nonlinearity of GaN grown by metalorganic chemical- vapor deposition

  Zhao, G. Y., Ishikawa, H., Yu, G., Egawa, T., Watanabe, J., Soga, T., Jimbo, T. & Umeno, M., 1998 12月 1, In: Applied Physics Letters. 73, 1, p. 22-24 3 p.

  研究成果: Article › 査読

  • ellipsometry 100%
  • metalorganic chemical vapor deposition 97%
  • nonlinearity 77%
  • coefficients 55%
  • temperature 30%
  18 被引用数 (Scopus)

• Thermo-optical nonlinearity of GaN grown by metalorganic chemical-vapor deposition

  Zhao, G. Y., Ishikawa, H., Yu, G., Egawa, T., Watanabe, J. & Soga, T., 1998 7月 1, In: Appl. Phys. Lett.. 73, p. 22-24

  研究成果: Article › 査読

  7 被引用数 (Scopus)

• Thermal stability of Pd/Al0.11Ga0.89N Schottky diodes

  Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 2000 9月 1, In: Default journal. p. PTD-47

  研究成果: Article › 査読

• Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AIN/sapphire template

  Zhang, B., Egawa, T., Ishikawa, H., Liu, Y. & Jimbo, T., 2004 3月 15, In: Journal of Applied Physics. 95, 6, p. 3170-3174 5 p.

  研究成果: Article › 査読

  • templates 100%
  • thermal stability 93%
  • sapphire 91%
  • light emitting diodes 85%
  • quantum wells 83%
  16 被引用数 (Scopus)

• Thermal stability of GaN on (1 1 1) Si substrate

  Ishikawa, H., Yamamoto, K., Egawa, T., Soga, T., Jimbo, T. & Umeno, M., 1998 6月 15, In: Journal of Crystal Growth. 189-190, p. 178-182 5 p.

  研究成果: Article › 査読

  • Thermodynamic stability 100%
  • thermal stability 84%
  • Annealing 76%
  • Substrates 68%
  • Thermal Stability 63%
  179 被引用数 (Scopus)

• Thermal stability of GaN on (111)Si substrate

  Ishikawa, H., Yamamoto, K., Egawa, T., Soga, T., Jimbo, T. & Umeno, M., 1998 6月 1, In: J. Crystal Growth. 189/190, p. 178-182

  研究成果: Article › 査読

  185 被引用数 (Scopus)

• Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

  Miura, N., Nanjo, T., Suita, M., Oishi, T., Abe, Y., Ozeki, T., Ishikawa, H., Egawa, T. & Jimbo, T., 2004 5月 1, In: Solid-State Electronics. 48, 5, p. 689-695 7 p.

  研究成果: Article › 査読

  • Schottky Contact 100%
  • Electron Mobility 73%
  • High electron mobility transistors 71%
  • Work Function 71%
  • high electron mobility transistors 63%
  113 被引用数 (Scopus)

• The infrared optical functions of Al_xGa_1-xN determined by reflectance spectroscopy

  Yu, G., Ishikawa, H., Umeno, M., Egawa, T., Watanabe, J., Soga, T. & Jimbo, T., 1998, In: Applied Physics Letters. 73, 11, p. 1472-1474 3 p.

  研究成果: Article › 査読

  • sapphire 100%
  • reflectance 82%
  • spectroscopy 61%
  • permittivity 20%
  • phonons 20%
  11 被引用数 (Scopus)

• The infrared optical functions of AlxGa1-xN determined by reflectance spectroscopy

  Yu, G., Ishikawa, H., M.Umeno, M. U., Egawa, T., Watanabe, J., Soga, T. & Jimbo, T., 1998 9月 1, In: Appl. Phys. Lett.. 73, p. 1472-1474

  研究成果: Article › 査読

  47 被引用数 (Scopus)

• Temperature dependence of gate-leakage current in AlGaN/GaN high-electron-mobility transistors

  Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 5月 5, In: Applied Physics Letters. 82, 18, p. 3110-3112 3 p.

  研究成果: Article › 査読

  • high electron mobility transistors 100%
  • leakage 80%
  • temperature dependence 62%
  • temperature 21%
  • activation energy 17%
  60 被引用数 (Scopus)

• Surface potential and topography measurements of gallium nitride on sapphire by scanning probe microscopy

  Uruma, T., Satoh, N. & Ishikawa, H., 2016, In: IEEJ Transactions on Sensors and Micromachines. 136, 4, p. 96-101 6 p.

  研究成果: Article › 査読

  • Scanning probe microscopy 100%
  • Crystal defects 98%
  • Gallium nitride 85%
  • Surface potential 84%
  • Sapphire 82%
  1 被引用数 (Scopus)

• Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO₂, Si₃N₄, and silicon oxynitride

  Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T. & Sano, Y., 2004 1月 26, In: Applied Physics Letters. 84, 4, p. 613-615 3 p.

  研究成果: Article › 査読

  • oxynitrides 100%
  • high electron mobility transistors 86%
  • passivity 77%
  • silicon 45%
  • electrical faults 16%
  204 被引用数 (Scopus)

• Suppression of GaInN/GaN Multi- Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure

  Ishikawa, H., Nakada, N., Mori, M., Zhao, G. -Y., Egawa, T., Jimbo, T. & Umeno, M., 2001 11月 1, In: Jpn. J. Appl. Phys.. 40, p. L1170-L1172

  研究成果: Article › 査読

  4 被引用数 (Scopus)

• Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN interfacial layer

  Miyoshi, M., Egawa, T. & Ishikawa, H., 2006 9月, In: Solid-State Electronics. 50, 9-10, p. 1515-1521 7 p.

  研究成果: Article › 査読

  • Metallorganic vapor phase epitaxy 100%
  • High electron mobility transistors 65%
  • high electron mobility transistors 58%
  • Two dimensional electron gas 49%
  • Metallorganic Chemical Vapour Deposition 45%
  22 被引用数 (Scopus)

• Studies on the influences of i-GaN, n-GaN, p-GaN and InGaN cap layers in AlGaN/GaN high-electron-mobility transistors

  Arulkumaran, S., Egawa, T. & Ishikawa, H., 2005 5月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 5 A, p. 2953-2960 8 p.

  研究成果: Article › 査読

  • High electron mobility transistors 100%
  • caps 91%
  • high electron mobility transistors 89%
  • Two dimensional electron gas 37%
  • Drain current 13%
  46 被引用数 (Scopus)

• Studies on electron beam evaporated ZrO ₂/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

  Balachander, K., Arulkumaran, S., Ishikawa, H., Baskar, K. & Egawa, T., 2005 1月 1, In: Physica Status Solidi (A) Applications and Materials Science. 202, 2, p. R16-R18

  研究成果: Article › 査読

  • Leakage Current 100%
  • Oxide semiconductors 90%
  • Electron beams 90%
  • High electron mobility transistors 87%
  • Electron Beam 82%
  59 被引用数 (Scopus)

• Studies of electron beam evaporated SiO₂/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

  Arulkumaran, S., Egawa, T. & Ishikawa, H., 2005 6月 24, In: Japanese Journal of Applied Physics, Part 2: Letters. 44, 24-27, p. L812-L815

  研究成果: Article › 査読

  • Oxide semiconductors 100%
  • Electron beams 99%
  • High electron mobility transistors 97%
  • high electron mobility transistors 87%
  • metal oxide semiconductors 86%
  27 被引用数 (Scopus)

• Studies of AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Silicon Carbide and Sapphire Substrates

  Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2001 9月 1, In: Default journal. p. C-1-2

  研究成果: Article › 査読

• Studies of AlGaN/GaN high-electron-mobility transistors on 4-in. diameter Si and sapphire substrates

  Arulkumaran, S., Egawa, T. & Ishikawa, H., 2005 10月, In: Solid-State Electronics. 49, 10, p. 1632-1638 7 p.

  研究成果: Article › 査読

  • Drain Current 100%
  • Sapphire 86%
  • High electron mobility transistors 74%
  • high electron mobility transistors 66%
  • sapphire 55%
  40 被引用数 (Scopus)

• Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties

  Miyoshi, M., Egawa, T. & Ishikawa, H., 2005 8月 1, In: J. Vac. Sci. Technol. B,. Vol. 23, p. 1527-1531

  研究成果: Article › 査読

  40 被引用数 (Scopus)

• Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional elctron transport porperties

  Miyoshi, M., Egawa, T. & Ishikawa, H., 2005, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23, 4, p. 1527-1531 5 p.

  研究成果: Article › 査読

  • Two dimensional electron gas 100%
  • Heterojunctions 74%
  • Metallorganic vapor phase epitaxy 40%
  • characterization 31%
  • Electron transport properties 22%
  41 被引用数 (Scopus)

• Sidegating effect of GaN MESFETs grown on sapphire substrate

  Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 1998 3月 19, In: Electronics Letters. 34, 6, p. 598-600 3 p.

  研究成果: Article › 査読

  • MESFET devices 100%
  • Sapphire 81%
  • Electron mobility 48%
  • Carrier concentration 43%
  • Substrates 43%
  1 被引用数 (Scopus)

• Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates

  Zhang, B. J., Egawa, T., Zhao, G. Y., Ishikawa, H., Umeno, M. & Jimbo, T., 2001 10月 15, In: Applied Physics Letters. 79, 16, p. 2567-2569 3 p.

  研究成果: Article › 査読

  • Schottky diodes 100%
  • sapphire 80%
  • electric potential 25%
  • electrical faults 23%
  • crystals 23%
  36 被引用数 (Scopus)

• Schottky contacts of Ni/Au on n-GaN grown on sapphire and SiC substrates

  Zhang, B. J., Zhao, G. Y., Nishikawa, N., Adachi, M., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 12月 1, In: SiC及び関連ワイドバンドギャップ半導体研究会　第9回講演会予稿集. p. P88 (2008)-103

  研究成果: Article › 査読

• Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates

  Ishikawa, H. & Shimanaka, K., 2011 1月 15, In: Journal of Crystal Growth. 315, 1, p. 196-199 4 p.

  研究成果: Article › 査読

  • Threading Dislocation 100%
  • Substrates 37%
  • Cathodoluminescence 33%
  • Metallorganic chemical vapor deposition 27%
  • Liquid Film 25%
  9 被引用数 (Scopus)

• Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire

  Egawa, T., Ishikawa, H., Umeno, M. & Jimbo, T., 2000 1月 3, In: Applied Physics Letters. 76, 1, p. 121-123 3 p.

  研究成果: Article › 査読

  • sapphire 100%
  • field effect transistors 92%
  • transconductance 86%
  • modulation 78%
  • electron gas 37%
  30 被引用数 (Scopus)

• Recessed-gate AlGaN/GaN HFETs with lattice-matched InAlGaN quaternary alloy capping layers

  Nakazawa, S., Ueda, T., Inoue, K., Tanaka, T., Ishikawa, H. & Egawa, T., 2005 10月 1, In: IEEE Transactions on Electron Devices. 52, 10, p. 2124-2128 5 p.

  研究成果: Article › 査読

  • Ohmic contacts 100%
  • Heterojunctions 86%
  • Field effect transistors 70%
  • Field Effect 65%
  • Polarization 60%
  16 被引用数 (Scopus)

• Realization of normally-off quaternary AlInGaN/GaN HEMT on sapphire substrate

  Liu, Y., Egawa, T., Jiang, H., Hayashi, M. & Ishikawa, H., 2006 10月 1, In: Default journal. p. MoP2-55

  研究成果: Article › 査読

• Polarized reflectance spectroscopy and spectroscopic ellipsometry determination of the optical anisotropy of gallium nitride on sapphire

  Yu, G., Ishikawa, H., Egawa, T., Soga, T., Watanabe, J., Jimbo, T. & Umeno, M., 1997 8月 1, In: Japanese Journal of Applied Physics, Part 2: Letters. 36, 8 PART A, p. L1029-L1031

  研究成果: Article › 査読

  • Optical anisotropy 100%
  • Spectroscopic ellipsometry 87%
  • Gallium nitride 66%
  • Sapphire 64%
  • Refractive index 63%
  46 被引用数 (Scopus)

• PL and structural studies of GaInN MQWs grown on Si substrates

  Ishikawa, H. & Mori, N., 2010 5月 21, In: The 8th International Symposium on Semiconductor Light Emitting Devices (Beijing, May 16-21, 2010).

  研究成果: Article › 査読

• Pd/GaN Schottky diode with a barrier height of 1.5 eV and a reasonably effective Richardson coefficient

  Ishikawa, H., Nakamura, K., Egawa, T., Jimbo, T. & Umeno, M., 1998 1月 15, In: Japanese Journal of Applied Physics, Part 2: Letters. 37, 1 PART A/B, p. L7-L9

  研究成果: Article › 査読

  • Schottky diodes 100%
  • Diodes 87%
  • Metallorganic chemical vapor deposition 74%
  • Electronic properties 73%
  • Ohmic contacts 71%
  10 被引用数 (Scopus)

• Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure

  Wang, G., Ogawa, T., Murase, K., Hori, K., Soga, T., Zhang, B., Zhao, G., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2001 8月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 40, 8, p. 4781-4784 4 p.

  研究成果: Article › 査読

  • phosphines 100%
  • Passivation 88%
  • Surface defects 87%
  • hydrogen plasma 82%
  • surface defects 79%
  1 被引用数 (Scopus)

• Orange GaInN/GaN Multi-Quantum-Well Light-Emitting Diodes using a Post-Annealing Technique

  Ishikawa, H., Egawa, T. & Jimbo, T., 2001 10月 1, In: Default journal. p. TuP-8

  研究成果: Article › 査読

• Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77 eV) by spectroscopic ellipsometry and the optical transmission method

  Yu, G., Wang, G., Ishikawa, H., Umeno, M., Soga, T., Egawa, T., Watanabe, J. & Jimbo, T., 1997 6月 16, In: Applied Physics Letters. 70, 24, p. 3209-3211 3 p.

  研究成果: Article › 査読

  • wurtzite 100%
  • ellipsometry 98%
  • sapphire 85%
  • optical properties 65%
  • refractivity 52%
  135 被引用数 (Scopus)

• Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77eV) by spectroscopic ellipsometry and the optical transmission method

  Yu, G., Wang, G., Ishikawa, H., Umeno, M., Soga, T., Egawa, T., Watanabe, J. & Jimbo, T., 1997 6月 1, In: Appl. Phys. Lett.. 70, p. 3209-3211

  研究成果: Article › 査読

  194 被引用数 (Scopus)

• Optical properties of AlxGa1-xN/GaN heterostructures on sapphire by spectroscopic ellipsometry

  Yu, G., Ishikawa, H., Umeno, M., Egawa, T., Watanabe, J., Jimbo, T. & Soga, T., 1998 5月 1, In: Appl. Phys. Lett.. 72, p. 2202-2204

  研究成果: Article › 査読

  25 被引用数 (Scopus)

• Optical properties of Al_xGa_1-xN/GaN heterostructures on sapphire by spectroscopic ellipsometry

  Yu, G., Ishikawa, H., Umeno, M., Egawa, T., Watanabe, J., Jimbo, T. & Soga, T., 1998, In: Applied Physics Letters. 72, 18, p. 2202-2204 3 p.

  研究成果: Article › 査読

  • ellipsometry 100%
  • sapphire 86%
  • excitons 80%
  • refractivity 71%
  • optical properties 66%
  22 被引用数 (Scopus)

• Optical degradation of InGaN/AlGaN light-emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition

  Egawa, T., Ishikawa, H., Jimbo, T. & Umeno, M., 1996 8月 5, In: Applied Physics Letters. 69, 6, p. 830-832 3 p.

  研究成果: Article › 査読

  • metalorganic chemical vapor deposition 100%
  • sapphire 89%
  • light emitting diodes 83%
  • degradation 79%
  • cathodoluminescence 38%
  40 被引用数 (Scopus)

• Optical characterization of GaN/sapphire films by spectroscopic ellipsometery and the optical transmission method

  Wang, G., Yu, G., Ishikawa, H., Egawa, T., Watanabe, J., Jimbo, T. & Umeno, M., 1997 3月 1, In: Default journal. p. 28p-D-1

  研究成果: Article › 査読

• Optical absorption and photoluminescence studies of n-type GaN

  Zhao, G. Y., Ishikawa, H., Jiang, H., Egawa, T., Jimbo, T. & Umeno, M., 1999 9月 15, In: Japanese Journal of Applied Physics, Part 2: Letters. 38, 9 A/B, p. L993-L995

  研究成果: Article › 査読

  • Photoluminescence 100%
  • Light absorption 93%
  • Tailings 80%
  • optical absorption 52%
  • Doping (additives) 45%
  25 被引用数 (Scopus)

• On the effects of gate-recess etching in current-collapse of different cap layers grown AlGaN/GaN high-electron-mobility transistors

  Arulkumaran, S., Egawa, T., Selvaraj, L. & Ishikawa, H., 2006 3月 10, In: Japanese Journal of Applied Physics, Part 2: Letters. 45, 8-11, p. L220-L223

  研究成果: Article › 査読

  • recesses 100%
  • High electron mobility transistors 86%
  • Etching 80%
  • caps 79%
  • high electron mobility transistors 77%
  18 被引用数 (Scopus)

• Novel quaternary AlInGaN/GaN heterostructure field effect transistors on sapphire substrate

  Liu, Y., Egawa, T., Jiang, H., Zhang, B. & Ishikawa, H., 2006 7月 7, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 7, p. 5728-5731 4 p.

  研究成果: Article › 査読

  • Sapphire 100%
  • High electron mobility transistors 86%
  • Two dimensional electron gas 65%
  • sapphire 63%
  • field effect transistors 58%
  5 被引用数 (Scopus)

• Novel inkjet printing system and formation mechanism of PdO nanofilms for field-emission imaging devices

  Kondo, H., Sato, T., Yamabe, J. & Ishikawa, H., 2017 7月 21, In: Journal of Physics D: Applied Physics. 50, 32, 325106.

  研究成果: Article › 査読

  • Field emission 100%
  • Nanofilm 93%
  • Field Emission 78%
  • printing 76%
  • Printing 75%
  1 被引用数 (Scopus)

• Near-ideal Schottky contact on quaternary AlInGaN epilayer lattice-matched with GaN

  Liu, Y., Egawa, T., Jiang, H., Zhang, B., Ishikawa, H. & Hao, M., 2004 12月 13, In: Applied Physics Letters. 85, 24, p. 6030-6032 3 p.

  研究成果: Article › 査読

  • Schottky diodes 100%
  • electric contacts 83%
  • polarization 34%
  • high electron mobility transistors 32%
  • electrical measurement 30%
  12 被引用数 (Scopus)