石川 博康

研究成果

年別の研究成果 1995 1998 2001 2003 2004 2018

• 156 Article
• 14 Conference article
• 6 Letter
• 3 Conference contribution
• 3 その他
  • 3 Paper

年別の研究成果

年別の研究成果

検索結果

• Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE

  Miyoshi, M., Sakai, M., Ishikawa, H., Egawa, T., Jimbo, T., Tanaka, M. & Oda, O., 2003 10月, In: IEICE Transactions on Electronics. E86-C, 10, p. 2077-2081 5 p.

  研究成果: Article › 査読

  • Metallorganic vapor phase epitaxy 100%
  • Metallorganic Chemical Vapour Deposition 91%
  • Sapphire 75%
  • Heterojunctions 74%
  • Bending (forming) 52%
  4 被引用数 (Scopus)

• Growth and Characterization of Quaternary AlInGaN Epilayers on Sapphire

  Liu, Y., Mori, M., Ishikawa, H., Egawa, T. & Jimbo, T., 2002 3月 1, In: Default journal. p. 27a-ZM-29

  研究成果: Article › 査読

• Growth and characterization of high-quality quaternry AlInGaN epilayers on aspphire

  Liu, Y., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 12月 1, In: J. Crystal Growth. 259, p. 245-251

  研究成果: Article › 査読

• Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire

  Liu, Y., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 12月, In: Journal of Crystal Growth. 259, 3, p. 245-251 7 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • Full width at half maximum 86%
  • Sapphire 78%
  • Blue shift 56%
  • Characterization (materials science) 51%
  32 被引用数 (Scopus)

• GaN on Si Substrate with AlGaN/AlN Intermediate Layer

  Ishikawa, H., Zhao, G. Y., Nakada, N., Egawa, T., Jimbo, T. & Umeno, M., 1999 5月 1, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38, 5 PART 2, p. 492-494 3 p.

  研究成果: Article › 査読

  • Full width at half maximum 100%
  • Photoluminescence 54%
  • Metallorganic chemical vapor deposition 53%
  • Substrates 47%
  • Single crystals 39%
  134 被引用数 (Scopus)

• GaN metal-semiconductor-metal UV photodetector with recessed electrodes

  Jiang, H., Okui, A., Ishikawa, H., Shao, C. L., Egawa, T. & Jimbo, T., 2002 1月 15, In: Japanese Journal of Applied Physics, Part 2: Letters. 41, 1 A/B, p. L34-L36

  研究成果: Article › 査読

  • Photodetectors 100%
  • photometers 68%
  • Semiconductor materials 68%
  • Electrodes 59%
  • Metals 49%
  6 被引用数 (Scopus)

• GaN MESFETs on (111) Si substrate grown by MOCVD

  Egawa, T., Nakada, N., Ishikawa, H. & Umeno, M., 2000 10月 12, In: Electronics Letters. 36, 21, p. 1816-1818 3 p.

  研究成果: Article › 査読

  • MESFET devices 100%
  • Metallorganic chemical vapor deposition 96%
  • Substrates 43%
  • Sapphire 40%
  • Transconductance 36%
  41 被引用数 (Scopus)

• GaN films and GaN-based light emitting diodes grown on the sapphire substrates with high-density nano-craters formed in situ metalorganic vapor phase epitaxial reactor

  Hao, M., Ishikawa, H., Zhang, B. & Egawa, T., 2004, In: Physica Status Solidi C: Conferences. 1, 10, p. 2397-2400 4 p.

  研究成果: Article › 査読

  • craters 100%
  • sapphire 74%
  • vapor phases 70%
  • light emitting diodes 69%
  • reactors 66%

• GaN-based optoelectronic devices on sapphire and Si substrates

  Umeno, M., Egawa, T. & Ishikawa, H., 2001 12月 1, In: Materials Science in Semiconductor Processing. 4, 6, p. 459-466 8 p.

  研究成果: Article › 査読

  • MESFET devices 100%
  • Sapphire 81%
  • Optoelectronic devices 71%
  • Transconductance 63%
  • optoelectronic devices 61%
  30 被引用数 (Scopus)

• GaN-based light-emitting diodes on Si substrates

  Ishikawa, H. & Egawa, T., 2004 12月 1, In: Default journal.

  研究成果: Article › 査読

• GaInN Light Emitting Diodes with Lattice-Matched AlInN/GaN Distributed Bragg Reflector on Si

  Ishikawa, H., Jimbo, T. & Egawa, T., 2007 9月 1, In: Default journal. p. MM3

  研究成果: Article › 査読

• Formation of coated phosphor layers by rotation-revolution for remote-phosphor LED bulbs and characterization of LED light bulb with super high color rendition

  Kondo, H. & Ishikawa, H., 2018 11月 1, In: IEEE Transactions on Components, Packaging and Manufacturing Technology. 8, 11, p. 2021-2029 9 p., 8408826.

  研究成果: Article › 査読

  • Phosphors 100%
  • Light emitting diodes 74%
  • Characterization (materials science) 66%
  • Color 54%
  • Coatings 11%

• Formation chemistry of high-density nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism of device-quality GaN films on the etched substrates

  Hao, M., Ishikawa, H. & Egawa, T., 2004 5月 17, In: Applied Physics Letters. 84, 20, p. 4041-4043 3 p.

  研究成果: Article › 査読

  • chemistry 100%
  • sapphire 98%
  • decomposition 88%
  • etching 87%
  • metalorganic chemical vapor deposition 36%
  12 被引用数 (Scopus)

• Fabrication of GaInN multiple-quantum well LEDs on Si (111) by MOCVD

  Adachi, M., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 9月 1, In: Default journal. p. PME-46

  研究成果: Article › 査読

• Fabrication of flat end mirror etched by focused ion beam for GaN-based blue-green laser diode

  Ito, T., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 1997 12月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 12 SUPPL. B, p. 7710-7711 2 p.

  研究成果: Article › 査読

  • Focused ion beams 100%
  • Semiconductor lasers 89%
  • Mirrors 73%
  • Metallorganic chemical vapor deposition 56%
  • ion beams 55%
  1 被引用数 (Scopus)

• Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaNGaN high-electron-mobility transistors on 4 in. diameter silicon

  Arulkumaran, S., Egawa, T., Matsui, S. & Ishikawa, H., 2005 3月 21, In: Applied Physics Letters. 86, 12, p. 1-3 3 p., 123503.

  研究成果: Article › 査読

  • high electron mobility transistors 100%
  • electrical faults 95%
  • buffers 81%
  • augmentation 58%
  • silicon 52%
  111 被引用数 (Scopus)

• Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N

  Arulkumaran, S., Egawa, T., Zhao, G. Y., Ishikawa, H., Jimbo, T. & Umeno, M., 2000 4月 1, In: Jpn. J. Appl. Phys.. 39, p. L351-L353

  研究成果: Article › 査読

• Electrical characteristics of AlGaN/GaN HEMTs on 4-in diameter sapphire substrate

  Arulkumaran, S., Miyoshi, M., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 8月 1, In: IEEE Electron Device Letters. 24, 8, p. 497-499 3 p.

  研究成果: Article › 査読

  • Hall Effect 100%
  • Sapphire 92%
  • High electron mobility transistors 80%
  • Drain Current 53%
  • Transconductance 53%
  8 被引用数 (Scopus)

• Effects of temperature on leakage current in AlGaN/GaN HEMTs

  Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 5月 1, In: Default journal. p. Tu-P2.068

  研究成果: Article › 査読

• Effects of RTA cover material on the properties of GaNAs/GaAs triple quantum wells grown by chemical beam epitaxy

  Sun, Y., Yamamori, M., Egawa, T., Ishikawa, H. & Mito, K., 2004 9月 1, In: Journal of Crystal Growth. 269, 2-4, p. 229-234 6 p.

  研究成果: Article › 査読

  • Chemical Beam Epitaxy 100%
  • Chemical beam epitaxy 96%
  • Semiconductor quantum wells 82%
  • Rapid thermal annealing 81%
  • Rapid Thermal Annealing 78%
  1 被引用数 (Scopus)

• Effects of Interfacial Thin Metal Layer for High-Performance Pt-Au-Based Schottky Contacts to AlGaN-GaN

  Miura, N., Oishi, T., Nanjo, T., Suita, M., Abe, Y., Ozeki, T., Ishikawa, H. & Egawa, T., 2004 3月 1, In: IEEE Transactions on Electron Devices. 51, 3, p. 297-303 7 p.

  研究成果: Article › 査読

  • Schottky Contact 100%
  • Diodes 56%
  • Auger electron spectroscopy 48%
  • Rapid thermal annealing 47%
  • Electrodes 47%
  27 被引用数 (Scopus)

• Effects of Annealing on Ti, Pd, and Ni/n-Al0.11Ga0.89N Schottky Diodes

  Arulkumaran, S., Egawa, T., Ishikawa, H., Umeno, M. & Jimbo, T., 2001 3月 1, In: Default journal. 48, p. 573-580

  研究成果: Article › 査読

  44 被引用数 (Scopus)

• Effects of annealing on Ti, Pd, and Ni/n-Al_0.11Ga_0.89N Schottky diodes

  Arulkumaran, S., Egawa, T., Ishikawa, H., Umeno, M. & Jimbo, T., 2001 3月, In: IEEE Transactions on Electron Devices. 48, 3, p. 573-580 8 p.

  研究成果: Article › 査読

  • Annealing 100%
  • Diodes 92%
  • Semiconductor 30%
  • Temperature 30%
  • Semiconductor materials 22%
  39 被引用数 (Scopus)

• Effect of various interlayers on epiwafer bowing in AlGaN/GaN high-electron-mobility transistor structures

  Sakai, M., Egawa, T., Hao, M. & Ishikawa, H., 2004 12月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 12, p. 8019-8023 5 p.

  研究成果: Article › 査読

  • Bending (forming) 100%
  • High electron mobility transistors 83%
  • high electron mobility transistors 74%
  • interlayers 65%
  • Multilayers 17%
  23 被引用数 (Scopus)

• Effect of RIE Damage to Blue and Green Light Emitting Diodes

  Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2000 3月 1, In: Default journal. p. TuP16

  研究成果: Article › 査読

• EBIC observation of n-GaN grown on sapphire substrates by MOCVD

  Yamamoto, K., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 1998 6月 15, In: Journal of Crystal Growth. 189-190, p. 575-579 5 p.

  研究成果: Article › 査読

  • Electron Beam Induced Current 100%
  • Metallorganic chemical vapor deposition 79%
  • Sapphire 67%
  • Induced currents 64%
  • Electron beams 60%
  17 被引用数 (Scopus)

• Drain-current collapse in AlGaN/GaN HEMTs on sapphire and semi-insulating SiC substrates

  Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2002 9月 1, In: Default journal. p. E-2-3

  研究成果: Article › 査読

• Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement

  Jiang, H., Zhao, G. Y., Ishikawa, H., Egawa, T., Jimbo, T. & Umeno, M., 2001 1月 15, In: Journal of Applied Physics. 89, 2, p. 1046-1052 7 p.

  研究成果: Article › 査読

  • excitons 100%
  • reflectance 89%
  • energy 37%
  • line shape 24%
  • metalorganic chemical vapor deposition 24%
  57 被引用数 (Scopus)

• Demonstration of undoped quaternary AlInGaNGaN heterostructure field-effect transistor on sapphire substrate

  Liu, Y., Jiang, H., Arulkumaran, S., Egawa, T., Zhang, B. & Ishikawa, H., 2005, In: Applied Physics Letters. 86, 22, p. 1-3 3 p., 223510.

  研究成果: Article › 査読

  • sapphire 100%
  • field effect transistors 92%
  • modulation 39%
  • transconductance 32%
  • electron gas 28%
  53 被引用数 (Scopus)

• Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition

  Egawa, T., Ohmura, H., Ishikawa, H. & Jimbo, T., 2002 7月 8, In: Applied Physics Letters. 81, 2, p. 292-294 3 p.

  研究成果: Article › 査読

  • metalorganic chemical vapor deposition 100%
  • templates 98%
  • sapphire 89%
  • light emitting diodes 83%
  • buffers 17%
  37 被引用数 (Scopus)

• DC Characteristics in High-Quality AlGaN/AlN/ High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates

  Miyoshi, M., Imanishi, A., Egawa, T., Ishikawa, H., Asai, K., Shibata, T. & Oda, O., 2005 9月 1, In: Jpn. J. Appl. Phys.. Vol. 44, p. 6490-6493

  研究成果: Article › 査読

  30 被引用数 (Scopus)

• DC characteristics in high-quality AlGaN/AlN/GaN high-electron-mobility transistors grown on AIN/sapphire templates

  Miyoshi, M., Imanishi, A., Egawa, T., Ishikawa, H., Asai, K. I., Shibata, T., Tanaka, M. & Oda, O., 2005 9月 8, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 9 A, p. 6490-6494 5 p.

  研究成果: Article › 査読

  • Sapphire 100%
  • High electron mobility transistors 86%
  • high electron mobility transistors 77%
  • templates 69%
  • sapphire 63%
  30 被引用数 (Scopus)

• Current collapse-free i-GaN/AlGaN/GaN high-electron-mobility transistors with and without surface passivation

  Arulkumaran, S., Hibino, T., Egawa, T. & Ishikawa, H., 2004 12月 6, In: Applied Physics Letters. 85, 23, p. 5745-5747 3 p.

  研究成果: Article › 査読

  • high electron mobility transistors 100%
  • passivity 89%
  • traps 72%
  • caps 25%
  • hysteresis 18%
  22 被引用数 (Scopus)

• Crystal growth of GaN on GaP substrate using RF plasma assisted metalorganic chemical vapor deposition for blue emitting laser diode on Si

  Ishikawa, H., Tsuchida, M., Shao, C. L., Soga, T., Jimbo, T. & Umeno, M., 1995 9月 1, In: Default journal. p. P-19

  研究成果: Article › 査読

• Correlation between electrical and surface properties of n-GaN on sapphire grown by metal-organic chemical vapor deposition

  Nakada, N., Mori, M., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 5月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42, 5 A, p. 2573-2577 5 p.

  研究成果: Article › 査読

  • Organic chemicals 100%
  • Hall mobility 86%
  • Sapphire 86%
  • Atomic force microscopy 82%
  • Chemical vapor deposition 75%
  7 被引用数 (Scopus)

• Composition pulling effect in the InGaN/GaN multiple quantum well and its effect on photoluminescence

  Hao, M., Ishikawa, H., Egawa, T. & Jimbo, T., 2003 5月 1, In: Default journal. p. Tu-P3.004

  研究成果: Article › 査読

• Comparative study on the properties of GaNAs/GaAs triple quantum wells annealed by different methods

  Sun, Y., Yamamori, M., Egawa, T. & Ishikawa, H., 2004 3月 1, In: Japanese Journal of Applied Physics, Part 2: Letters. 43, 3 A, p. L334-L336

  研究成果: Article › 査読

  • Semiconductor quantum wells 100%
  • Rapid thermal annealing 98%
  • quantum wells 49%
  • Optical properties 39%
  • annealing 38%
  3 被引用数 (Scopus)

• Comparative study of drain-current collapse in AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC

  Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2002 10月 14, In: Applied Physics Letters. 81, 16, p. 3073-3075 3 p.

  研究成果: Article › 査読

  • high electron mobility transistors 100%
  • sapphire 82%
  • traps 36%
  • low currents 17%
  • high voltages 14%
  56 被引用数 (Scopus)

• Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire

  Egawa, T., Zhao, G. Y., Ishikawa, H., Umeno, M. & Jimbo, T., 2001 3月 1, In: IEEE Transactions on Electron Devices. 48, 3, p. 603-608 6 p.

  研究成果: Article › 査読

  • Electron gas 100%
  • Electron Gas 86%
  • Sapphire 73%
  • Heterojunctions 72%
  • Electron Mobility 65%
  72 被引用数 (Scopus)

• Characterizations of GaInN Light Emitting Diodes with Distributed Bragg Reflector Grown on Si

  Ishikawa, H., Zhang, B., Asano, K., Egawa, T. & Jimbo, T., 2004 5月 1, In: Default journal.

  研究成果: Article › 査読

  13 被引用数 (Scopus)

• Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si

  Ishikawa, H., Zhang, B., Asano, K., Egawa, T. & Jimbo, T., 2004 12月 10, In: Journal of Crystal Growth. 272, 1-4 SPEC. ISS., p. 322-326 5 p.

  研究成果: Article › 査読

  • Distributed Bragg reflectors 100%
  • Bragg reflectors 57%
  • Light emitting diodes 51%
  • Chemical Vapour Deposition 46%
  • light emitting diodes 41%
  22 被引用数 (Scopus)

• Characterization of different-Al-content Al_xGa_1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire

  Arulkumaran, S., Egawa, T., Ishikawa, H. & Jimbo, T., 2003 3月 1, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21, 2, p. 888-894 7 p.

  研究成果: Article › 査読

  • Two dimensional electron gas 100%
  • Sapphire 76%
  • Heterojunctions 74%
  • High electron mobility transistors 65%
  • high electron mobility transistors 58%
  96 被引用数 (Scopus)

• Characterization of different-Al-content AlGaN/GaN heterostructures and high-electron-mobility transistors grown on 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy

  Miyoshi, M., Sakai, M., Arulkumaran, S., Ishikawa, H., Egawa, T., Tanaka, M. & Oda, O., 2004 12月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 12, p. 7939-7943 5 p.

  研究成果: Article › 査読

  • Metallorganic vapor phase epitaxy 100%
  • Sapphire 75%
  • Heterojunctions 74%
  • High electron mobility transistors 65%
  • vapor phase epitaxy 59%
  21 被引用数 (Scopus)

• Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD

  Egawa, T., Nakamura, K., Ishikawa, H., Jimbo, T. & Umeno, M., 1998 9月 1, In: Default journal. p. C-10-2

  研究成果: Article › 査読

• Characteristics of BCl3 Plasma-Etched GaN Schottky Diodes

  Nakaji, M., Egawa, T., Ishikawa, H., Arulkumaran, S. & Jimbo, T., 2002 4月 1, In: Default journal. 41, p. L493-495

  研究成果: Article › 査読

  14 被引用数 (Scopus)

• Characteristics of a GaN metal semiconductor field-effect transistor grown on a sapphire substrate by metalorganic chemical vapor deposition

  Egawa, T., Nakamura, K., Ishikawa, H., Jimbo, T. & Umeno, M., 1999, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 38, 4 B, p. 2630-2633 4 p.

  研究成果: Article › 査読

  • MESFET devices 100%
  • Metallorganic chemical vapor deposition 96%
  • Sapphire 81%
  • metalorganic chemical vapor deposition 58%
  • sapphire 52%
  1 被引用数 (Scopus)

• Characteristics of a GaN Metal Semiconductor Field-Effect TransistorGrown on a Sapphire Substrate by Metalorganic Chemical Vapor Deposition

  Egawa, T., Nakamura, K., Ishikawa, H., Jimbo, T. & Umeno, M., 1999 4月 1, In: Default journal. 38, p. 2630-2633

  研究成果: Article › 査読

  1 被引用数 (Scopus)

• Bonding of GaN with Si using SeS2 and Laser Lift-off

  Arokiaraj, J., Ishikawa, H., Soga, T., Egawa, T., Jimbo, T. & Umeno, M., 2000 9月 1, In: Default journal. p. MA4-3

  研究成果: Article › 査読

• Barrier-height-enhanced n-GaN Schottky photodiodes using a thin p-GaN surface layer

  Jiang, H., Egawa, T., Ishikawa, H., Dou, Y., Shao, C. & Jlmbo, T., 2004 7月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 7 A, p. 4101-4104 4 p.

  研究成果: Article › 査読

  • Photodiodes 100%
  • photodiodes 73%
  • surface layers 70%
  • Dark currents 60%
  • dark current 41%
  2 被引用数 (Scopus)

• Back-illuminated GaN metal-semiconductor-metal UV photodetector with high internal gain

  Jiang, H., Nakata, N., Zhao, G. Y., Ishikawa, H., Shao, C. L., Egawa, T., Jimbo, T. & Umeno, M., 2001 5月 15, In: Japanese Journal of Applied Physics, Part 2: Letters. 40, 5 B, p. L505-L507

  研究成果: Article › 査読

  • Photodetectors 100%
  • photometers 68%
  • Semiconductor materials 68%
  • Lighting 61%
  • illumination 58%
  44 被引用数 (Scopus)