年別の研究成果
年別の研究成果
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Article
Thin-film InGaN multiple-quantum-well light-emitting diodes transferred from Si (111) substrate onto copper carrier by selective lift-off
Zhang, B., Egawa, T., Ishikawa, H., Liu, Y. & Jimbo, T., 2005 2月 14, In: Applied Physics Letters. 86, 7, p. 1-3 3 p., 071113.研究成果: Article › 査読
30 被引用数 (Scopus) -
Three growth-temperature-dependent regions for nitrogen incorporation in GaNAs grown by chemical beam epitaxy
Sun, Y., Yamamori, M., Egawa, T. & Ishikawa, H., 2004 5月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 5 A, p. 2409-2413 5 p.研究成果: Article › 査読
13 被引用数 (Scopus) -
Valence-Band Discontinuity at the AIN/Si Interface
Ishikawa, H., Zhang, B., Egawa, T. & Jimbo, T., 2003 10月, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42, 10, p. 6413-6414 2 p.研究成果: Article › 査読
Open Access18 被引用数 (Scopus) -
Valence Band Discontinuity at the AlN/Si Interface
Ishikawa, H., Zhang, B., Egawa, T. & T.Jimbo, T. J., 2003 10月 1, In: Jpn. J. Appl. Phys.. 42, p. 6413-6414研究成果: Article › 査読
22 被引用数 (Scopus) -
Visible-blind metal-semiconductor-metal photodetectors based on undoped AlGaN/GaN high electron mobility transistor structure
Jiang, H., Egawa, T., Ishikawa, H., Shao, C. & Jimbo, T., 2004 5月 15, In: Japanese Journal of Applied Physics, Part 2: Letters. 43, 5 B, p. L683-L685研究成果: Article › 査読
22 被引用数 (Scopus) -
Zn ion implantation along the c axis for formation of highly resistive GaN layers
Oishi, T., Miura, N., Suita, M., Nanjo, T., Abe, Y., Ozeki, T., Ishikawa, H. & Egawa, T., 2004, In: Shinku/Journal of the Vacuum Society of Japan. 47, 4, p. 328-333 6 p.研究成果: Article › 査読
Open Access