弓野 健太郎

研究成果

年別の研究成果 1970 1996 2002 2003 2004 2005 2022

• 157 Article
• 7 Conference article
• 5 Conference contribution
• 2 Paper
• 2 その他
  • 1 Comment/debate
  • 1 Review article

年別の研究成果

年別の研究成果

検索結果

• 2022

  Crystallization of Ge thin films by Au-induced layer exchange: Effect of Au layer thickness on Ge crystal orientation

  Sunthornpan, N., Kimura, K. & Kyuno, K., 2022 2月, In: Japanese Journal of Applied Physics. 61, SB1029.

  研究成果: Article › 査読

  • Crystal orientation 100%
  • Crystallization 78%
  • Crystals 71%
  • Thin films 68%
  • crystallization 55%
  3 被引用数 (Scopus)

• Morphology of Ge thin films crystallized by Au-induced layer exchange at low temperature (220 °c)

  Sunthornpan, N., Kimura, K. & Kyuno, K., 2022 5月 1, In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 40, 3, 030601.

  研究成果: Article › 査読

  • Thin films 100%
  • Amorphous Material 73%
  • Crystallization 57%
  • Crystalline materials 55%
  • thin films 54%
  1 被引用数 (Scopus)
• 2020

  Effect of gold layer thickness on the low-temperature crystallization process of germanium thin films by gold-induced crystallization

  Sunthornpan, N., Tauchi, K., Tezuka, N. & Kyuno, K., 2020 8月 1, In: Japanese Journal of Applied Physics. 59, 8, 080904.

  研究成果: Article › 査読

  • Germanium 100%
  • Crystallization 81%
  • Gold 80%
  • Thin films 70%
  • germanium 66%
  4 被引用数 (Scopus)
• 2018

  Argon-plasma-controlled optical reset in the SiO₂/Cu filamentary resistive memory stack

  Kawashima, T., Yew, K. S., Zhou, Y., Ang, D. S., Zhang, H. Z. & Kyuno, K., 2018 5月 21, In: Applied Physics Letters. 112, 21, 213505.

  研究成果: Article › 査読

  • argon plasma 100%
  • oxides 53%
  • oxygen 38%
  • oxygen ions 23%
  • surface treatment 22%
  5 被引用数 (Scopus)
• 2017

  Evolution of a liquid-like fluid phase on Ge/Au(111) at room temperature: A direct observation by STM

  Wakabayashi, Y., Hashiguchi, K., Inase, Y., Kamiko, M. & Kyuno, K., 2017 12月 25, In: Applied Physics Letters. 111, 26, 261601.

  研究成果: Article › 査読

  • fluids 100%
  • room temperature 94%
  • liquids 89%
  • atoms 85%
  • catalysts 52%
  2 被引用数 (Scopus)

• Low-temperature (330 °C) crystallization and dopant activation of Ge thin films via AgSb-induced layer exchange: Operation of an n-channel polycrystalline Ge thin-film transistor

  Suzuki, T., Joseph, B. M., Fukai, M., Kamiko, M. & Kyuno, K., 2017 9月, In: Applied Physics Express. 10, 9, 095502.

  研究成果: Article › 査読

  • Thin film transistors 100%
  • Doping (additives) 87%
  • Crystallization 85%
  • Thin films 73%
  • Chemical activation 70%
  19 被引用数 (Scopus)
• 2016

  Fabrication of crystalline Ge thin films by co-deposition of Au and Ge at low substrate temperatures (>200 °c) without post annealing

  Sugiyama, T., Mishiba, N., Kamiko, M. & Kyuno, K., 2016 9月, In: Applied Physics Express. 9, 9, 095501.

  研究成果: Article › 査読

  • Crystallization 100%
  • Crystalline materials 96%
  • Annealing 91%
  • Thin films 86%
  • crystallization 70%
  5 被引用数 (Scopus)
• 2015

  Effect of seed layers on structure of self-organized Ag nanodots on MgO substrates

  Kamiko, M., Suenaga, R., Koo, J. W., Nose, K., Kyuno, K., Mitsuda, Y. & Ha, J. G., 2015 6月 1, In: Japanese Journal of Applied Physics. 54, 6, 06FH06.

  研究成果: Article › 査読

  • Nanodots 100%
  • Seed 56%
  • seeds 50%
  • Substrates 38%
  • insertion 17%
  5 被引用数 (Scopus)

• Fabrication of self-organized epitaxial fcc-Ag(110)-oriented nanorods by a Ti seed-layer-assisted thermal agglomeration method

  Kamiko, M., Suenaga, R., Koo, J. W., Nose, K., Kyuno, K. & Ha, J. G., 2015 3月 1, In: Applied Physics Express. 8, 3, 035503.

  研究成果: Article › 査読

  • Nanorods 100%
  • agglomeration 73%
  • Seed 69%
  • nanorods 66%
  • seeds 62%
  6 被引用数 (Scopus)
• 2013

  Effect of Ti seed layers on structure of self-organized epitaxial face-centered-cubic-Ag(001) oriented nanodots

  Kamiko, M., Suenaga, R., Koo, J. W., Nose, K., Kyuno, K. & Ha, J. G., 2013 12月 28, In: Journal of Applied Physics. 114, 24, 244307.

  研究成果: Article › 査読

  • seeds 100%
  • agglomeration 33%
  • photoelectron spectroscopy 25%
  • atomic force microscopy 23%
  • x rays 20%
  10 被引用数 (Scopus)

• Epitaxial growth of fcc-Ag(0 0 1) nanodots on MgO(0 0 1) substrates via Ti seed layer-assisted agglomeration

  Kamiko, M., Suenaga, R., Koo, J. W., Nose, K., Kyuno, K. & Ha, J. G., 2013 12月 18, In: Journal of Physics D: Applied Physics. 46, 50, 505304.

  研究成果: Article › 査読

  • Nanodots 100%
  • Epitaxial growth 76%
  • Epitaxial Growth 66%
  • agglomeration 59%
  • Seed 56%
  8 被引用数 (Scopus)

• Novel crystallization process for germanium thin films: Surfactant-crystallization method

  Miura, H., Kamiko, M. & Kyuno, K., 2013 1月, In: Japanese Journal of Applied Physics. 52, 1, 010204.

  研究成果: Article › 査読

  • Germanium 100%
  • Surface active agents 81%
  • Crystallization 81%
  • surfactants 71%
  • Thin films 70%
  3 被引用数 (Scopus)
• 2012

  The Influence of Ta underlayers on the structure of TiO ₂ thin films deposited on an unheated glass substrate

  Kamiko, M., Aotani, K., Suenaga, R., Koo, J. W., Nose, K., Kyuno, K. & Ha, J. G., 2012 9月 1, In: Applied Surface Science. 258, 22, p. 8764-8768 5 p.

  研究成果: Article › 査読

  • Glass Substrate 100%
  • Thin films 95%
  • Glass 80%
  • Substrates 71%
  • glass 58%
  6 被引用数 (Scopus)
• 2011

  Two-step forming process in planar-type Cu₂O-based resistive switching devices

  Suzuki, K., Igarashi, N. & Kyuno, K., 2011 5月, In: Applied Physics Express. 4, 5

  研究成果: Article › 査読

  • filaments 100%
  • optical microscopes 40%
  • Transmission electron microscopy 39%
  • Microscopes 37%
  • Melting 36%
  3 被引用数 (Scopus)
• 2009

  Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators

  Y.Zhao, Y. Z., K.Kita, K. K., K.Kyuno, K. K., A.Toriumi, A. T. & Kyuno, K., 2009 4月 1, In: Applied Physics Letters. 94

  研究成果: Article › 査読

• Band gap enhancement and electrical properties of La2 O3 films doped with Y₂ O₃ as high- k gate insulators

  Zhao, Y., Kita, K., Kyuno, K. & Toriumi, A., 2009, In: Applied Physics Letters. 94, 4, 042901.

  研究成果: Article › 査読

  • insulators 100%
  • electrical properties 99%
  • augmentation 82%
  • capacitors 78%
  • leakage 74%
  58 被引用数 (Scopus)

• Dielectric and electrical properties of amorphous La1-XTaXOY films as higher-k gate insulators

  Y.Zhao, Y. Z., K.Kita, K. K., K.Kyuno, K. K., A.Toriumi, A. T. & Kyuno, K., 2009 3月 1, In: Journal of Applied Physics. 105

  研究成果: Article › 査読

• Dielectric and electrical properties of amorphous La_1-xTa _xO_y films as higher- k gate insulators

  Zhao, Y., Kita, K., Kyuno, K. & Toriumi, A., 2009, In: Journal of Applied Physics. 105, 3, 034103.

  研究成果: Article › 査読

  • dielectric properties 100%
  • insulators 88%
  • electrical properties 88%
  • permittivity 33%
  • oxygen atoms 24%
  20 被引用数 (Scopus)

• Observation of the creation and annihilation of local current paths in HfO2 thin films on pt by ultrahigh-vacuum conductive atomic force microscopy: Evidence of oxygen spill over during the forming process

  Sasaki, N., Kita, K., Toriumi, A. & Kyuno, K., 2009 6月, In: Japanese Journal of Applied Physics. 48, 6, 060202.

  研究成果: Article › 査読

  • Ultrahigh vacuum 100%
  • Atomic force microscopy 81%
  • Hazardous materials spills 80%
  • oxygen ions 69%
  • ultrahigh vacuum 63%
  9 被引用数 (Scopus)

• Observation of the creation and annihilation of local current paths in HfO2 thin films on Pt by ultrahigh-vacuum conductive atomic force microscopy : Evidence of oxygen spill over during the forming process

  N.Sasaki, N. S., K.Kita, K. K., A.Toriumi, A. T., K.Kyuno, K. K. & Kyuno, K., 2009 6月 1, In: Japanese Journal of Applied Physics. 48

  研究成果: Article › 査読

  9 被引用数 (Scopus)
• 2007

  Study of La-induced flat band voltage shift in Metal/HfLaOx/SiO2/Si capacitors

  Y.Yamamoto, Y. Y., K.Kita, K. K., K.Kyuno, K. K., A.Toriumi, A. T. & Kyuno, K., 2007 11月 1, In: Japanese Journal of Applied Physics Letters 46.

  研究成果: Article › 査読

• Study of La-induced flat band voltage shift in metal/HfLaO _x/SiO₂/Si capacitors

  Yamamoto, Y., Kita, K., Kyuno, K. & Toriumi, A., 2007 11月 6, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46, 11, p. 7251-7255 5 p.

  研究成果: Article › 査読

  • capacitors 100%
  • Capacitors 90%
  • Metals 73%
  • shift 69%
  • electric potential 62%
  118 被引用数 (Scopus)

• Suppression of leakage current and moisture absorption of La2O3 films with ultraviolet ozone post treatment

  Y.Zhao, Y. Z., K.Kita, K. K., K.Kyuno, K. K., A.Toriumi, A. T. & Kyuno, K., 2007 7月 1, In: Japanese Journal of Applied Physics Letters 46.

  研究成果: Article › 査読

• Suppression of leakage current and moisture absorption of la ₂O₃ films with ultraviolet ozone post treatment

  Zhao, Y., Kita, K., Kyuno, K. & Toriumi, A., 2007 7月 4, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46, 7 A, p. 4189-4192 4 p.

  研究成果: Article › 査読

  • Ozone 100%
  • ozone 86%
  • Leakage currents 85%
  • moisture 85%
  • Moisture 68%
  37 被引用数 (Scopus)
• 2006

  Higher-k LaYOx films with strong moisture resistance

  Y.Zhao, Y. Z., K.Kita, K. K., K.Kyuno, K. K., A.Toriumi, A. T. & Kyuno, K., 2006 12月 1, In: Applied Physics Letters 89.

  研究成果: Article › 査読

  72 被引用数 (Scopus)

• Higher-k LaYO_x films with strong moisture resistance

  Zhao, Y., Kita, K., Kyuno, K. & Toriumi, A., 2006, In: Applied Physics Letters. 89, 25, 252905.

  研究成果: Article › 査読

  • moisture resistance 100%
  • permittivity 40%
  • moisture 12%
  • rare earth elements 10%
  • oxides 7%
  72 被引用数 (Scopus)

• Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon

  Zhao, Y., Toyama, M., Kita, K., Kyuno, K. & Toriumi, A., 2006, In: Applied Physics Letters. 88, 7, 072904.

  研究成果: Article › 査読

  • lanthanum oxides 100%
  • moisture 72%
  • deterioration 70%
  • oxide films 60%
  • surface roughness 56%
  189 被引用数 (Scopus)

• Reversible creation and annihilation of a local leakage path in HfO ₂/GeO_x stacked gate dielectrics: A direct observation by ultrahigh vacuum conducting atomic force microscopy

  Yamamura, K., Kita, K., Toriumi, A. & Kyuno, K., 2006 12月 7, In: Applied Physics Letters. 89, 22, 222101.

  研究成果: Article › 査読

  • ultrahigh vacuum 100%
  • leakage 82%
  • atomic force microscopy 76%
  • conduction 66%
  • degradation 25%
  5 被引用数 (Scopus)

• Reversible creation and annihilation of a local leakage path in HfO2/GeOx stacked gate dielectrics: A direct observation by ultrahigh vacuum conducting atomic force microscopy

  K.Yamamura, K. Y., K.Kita, K. K., A.Toriumi, A. T., K.Kyuno, K. K. & Kyuno, K., 2006 11月 1, In: Applied Physics Letters 89.

  研究成果: Article › 査読

• Structural and electrical properties of HfLaO_x films for an amorphous high-k gate insulator

  Yamamoto, Y., Kita, K., Kyuno, K. & Toriumi, A., 2006, In: Applied Physics Letters. 89, 3, 032903.

  研究成果: Article › 査読

  • insulators 100%
  • electrical properties 99%
  • amorphous materials 79%
  • electric potential 73%
  • metal oxide semiconductors 69%
  147 被引用数 (Scopus)

• Structure and electrical properties of HfLaOx films for an amorphous high-k gate insulator

  Y.Yamamoto, Y. Y., K.Kita, K. K., K.Kyuno, K. K., A.Toriumi, A. T. & Kyuno, K., 2006 4月 1, In: Applied Physics Letters. 89

  研究成果: Article › 査読
• 2005

  Evolution of Leakage Paths in HfO2/SiO2 Stacked Gate Dielectrics: A Stable Direct Observation by Ultrahigh Vacuum Conducting Atomic Force Microscopy

  K.Kyuno, K. K., K.Kita, K. K., A.Toriumi, A. T. & Kyuno, K., 2005 4月 1, In: Applied Physics Letters.

  研究成果: Article › 査読

• Evolution of leakage paths in Hf O2 Si O2 stacked gate dielectrics: A stable direct observation by ultrahigh vacuum conducting atomic force microscopy

  Kyuno, K., Kita, K. & Toriumi, A., 2005 2月 7, In: Applied Physics Letters. 86, 6, p. 1-3 3 p., 063510.

  研究成果: Article › 査読

  • ultrahigh vacuum 100%
  • leakage 82%
  • atomic force microscopy 76%
  • conduction 66%
  30 被引用数 (Scopus)

• Far- and Mid- Infrared Absorption Study of HfO2/SiO2/Si System

  Toriumi, A., Tomida, K., Shimizu, H., Kita, K. & Kyuno, K., 2005 5月 1, In: 207th Meeting of the Electrochemical Society.

  研究成果: Article › 査読

• Interface Reaction of High-k Films with Germanium Substrate

  Toriumi, A., Kita, K., Toyama, M. & Kyuno, K., 2005 3月 1, In: 2005 MRS Spring Meeting.

  研究成果: Article › 査読

• Kinetic model of Si oxidation at HfO₂/Si interface with post deposition annealing

  Shimizu, H., Kita, K., Kyuno, K. & Toriumi, A., 2005 8月 5, In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 8, p. 6131-6135 5 p.

  研究成果: Article › 査読

  • Annealing 100%
  • Oxidation 88%
  • oxidation 73%
  • annealing 60%
  • kinetics 60%
  30 被引用数 (Scopus)

• Kinetic Model of Si Oxidation at HfO2/Si Interface with Post Deposition Annealing

  H.Shimizu, H. S., K.Kita, K. K., K.Kyuno, K. K., A.Toriumi, A. T. & Kyuno, K., 2005 4月 1, In: Japanese Journal of Applied Physics. 44

  研究成果: Article › 査読

  30 被引用数 (Scopus)

• Origin of Permittivity Enhancement of HfSiO and HfON Film with High Temperature Annealing

  Kyuno, K., 2005 3月 1, In: International Conference on Microelectronics and Interfaces(ICMI '06).

  研究成果: Article › 査読

• Permittivity Increase of Yttriium-Doped HfO2 through Structural Phase Transformation

  K.Kita, K. K., K.Kyuno, K. K., A.Torium, A. T. & Kyuno, K., 2005 4月 1, In: Applied Physics Letters. 86

  研究成果: Article › 査読

• Permittivity increase of yttrium-doped Hf O2 through structural phase transformation

  Kita, K., Kyuno, K. & Toriumi, A., 2005 3月 7, In: Applied Physics Letters. 86, 10, p. 1-3 3 p., 102906.

  研究成果: Article › 査読

  • yttrium 100%
  • phase transformations 82%
  • permittivity 64%
  • hafnium 19%
  • shrinkage 15%
  169 被引用数 (Scopus)

• ＵＨＶ－Ｃ－ＡＦＭ（Ｕｌｔｒａ　Ｈｉｇｈ　Ｖａｃｕｕｍ－Ｃｏｎｄｕｃｔｉｖｅ－Ａｔｏｍｉｃ　Ｆｏｒｃｅ　Ｍｉｃｒｏｓｃｏｐｙ）によるＭＯＳＦＥＴ用ゲート絶縁膜のリーク電流の局所観察

  Kyuno, K., Kita, K. & Toriumi, A., 2005 4月 1, In: Applied Physics Letters. 86

  研究成果: Article › 査読
• 2004

  Accumulated Carrier Density Dependence of Pentacene TFT Mobility Determined by Split C-V Technique

  Yokoyama, T., Nishimura, T., Kita, K., Kyuno, K. & Toriumi, A., 2004 9月 1, In: Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM). p. 856-857

  研究成果: Article › 査読

• Advantages of Ge (111) Surface for High Quality HfO2/Ge Interface

  Toyama, M., Kita, K., Kyuno, K. & Toriumi, A., 2004 9月 1, In: Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM). p. 226-227

  研究成果: Article › 査読

• Complex Impedance Analysis and Photo-Induced Effects of Semiconducting Pentacene Films

  Nishimura, T., Yokoyama, T., Kita, K., Kyuno, K. & Toriumi, A., 2004 9月 1, In: Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM). p. 866-867

  研究成果: Article › 査読

• Dielectric Constant Increase of Yttrium-Doped HfO2 by Structural Phase Modification

  Kita, K., Kyuno, K. & toriumi, A., 2004 9月 1, In: Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM). p. 794-795

  研究成果: Article › 査読

• Difference between O2 and N2 Annealing Effects on CVD-SiO2 Film Quality Studied by Open-Circuit Measurement

  Kita, K., Kyuno, K. & Toriumi, A., 2004 9月 1, In: Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM). p. 786-787

  研究成果: Article › 査読

• Far Infrared Study of Structural Distortion and Transformation of HfO2 by Introducing a Slight Amount Si

  Tomida, K., Kita, K., Kyuno, K. & Toriumi, A., 2004 9月 1, In: Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM). p. 790-791

  研究成果: Article › 査読

• Generalized Model of Oxidation Mechanism at HfO2/Si Interface with Post-Deposition Annealing

  Shimizu, H. & Kyuno, K., 2004 9月 1, In: Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM). p. 796-797

  研究成果: Article › 査読

• Growth mechanism difference of sputtered HfO₂ on Ge and on Si

  Kita, K., Kyuno, K. & Toriumi, A., 2004 7月 5, In: Applied Physics Letters. 85, 1, p. 52-54 3 p.

  研究成果: Article › 査読

  • sputtering 100%
  • oxides 79%
  • thin films 65%
  91 被引用数 (Scopus)

• Growth Mechanism Difference of Sputtered HfO2 on Ge and on Si

  K.Kita, K. K., K.Kyuno, K. K., A.Toriumi, A. T. & Kyuno, K., 2004 4月 1, In: Applied Physics Letters. 85

  研究成果: Article › 査読

  91 被引用数 (Scopus)