田中 愼一

研究成果

年別の研究成果 1987 1987 1995 1998 2000 2003 2004 2006 2007 2015 2022

• 69 Article
• 19 Conference contribution
• 10 Paper
• 9 Conference article
• 4 その他
  • 2 Chapter
  • 1 Editorial
  • 1 Letter

年別の研究成果

年別の研究成果

検索結果

• 1987

  A Novel Fully Self-Aligned Closely-Spaced-Electrode HBT for SSI Logic Family Applications.

  S, M. M., N.Hayama, M. M. S. T., K.Honjo, K. H. & Tanaka, S., 1987 1月 1, In: IEEE GaAs IC Symposium. p. 113-116

  研究成果: Article › 査読

• A Novel Process for Emitter-Base-Collector Self-Aligned Heterojunction Bipolar Transistors Using a Pattern-Inversion Method

  S.Tanaka, S. T., H.Toyoshima, S. T. M. M., K.Honjo, K. H. & Tanaka, S., 1987 5月 1, In: Electronics Letters. 23, p. 562-564

  研究成果: Article › 査読

• Far-Infrared Magneto-Refelection Study of Band Warping in HgTe.

  S.Tanaka, S. T., Miura, S. T. S. T., S.Uchida, S. U. & Tanaka, S., 1987 1月 1, In: Journal of Physical Society of Japan. 56, p. 788-793

  研究成果: Article › 査読

• Far-Infrared Magneto-Reflection Study of the Band Warping in HgTe

  Tanaka, S., Takeyama, S., Miura, N. & Uchida, S., 1987 2月 15, In: Journal of the Physical Society of Japan. 56, 2, p. 788-793

  研究成果: Article › 査読

• Novel process for emitter-base-collector self-aligned hetero j unction bipolar transistor using a pattern-inversion method

  Tanaka, S., Madihian, M., Toyoshima, H., Hayama, N. & Honjo, K., 1987 1月 1, In: Electronics Letters. 23, 11, p. 562-564 3 p.

  研究成果: Article › 査読

  • Bipolar transistors 100%
  • Heterojunction bipolar transistors 96%
  • Dry etching 39%
• 1988

  Observation of Gap Anisotropy in YBa2Cu3O7- by Tunneling

  I, J. S. T., Y.B, J. S. T. I. T. F. Y. M. T. T., K.Iijima, O., K.Yamamoto, K. Y. & Tanaka, S., 1988 1月 1, In: Phisica C. 153-155, p. 1385-1386

  研究成果: Article › 査読

  12 被引用数 (Scopus)

• Observation of gap anisotropy in YBa₂Cu₃O_7−δ by tunneling

  Tsai, J. S., Takeuchi, I., Fujita, J., Yoshitake, T., Miura, S., Tanaka, S., Terashima, T., Bando, Y., Iijima, K. & Yamamoto, K., 1988, In: Physica C: Superconductivity and its applications. 153-155, p. 1385-1386 2 p.

  研究成果: Article › 査読

  • Anisotropy 100%
  • Tunneling 98%
  • Energy gap 72%
  • anisotropy 61%
  • Band Gap 48%
  2 被引用数 (Scopus)

• Self-Aligned AlInAs/InGaAs HBTs for Digital IC Applications.

  S.Tanaka, S. T., M.Madihian, S. T. A. F. B. O., K.Honjo, K. H. & Tanaka, S., 1988 7月 1, In: Electronics Letters. 24, p. 872-873

  研究成果: Article › 査読

  1 被引用数 (Scopus)

• Self-Aligned AllnAs/GalnAs HBTs for Digital IC Applications

  Tanaka, S., Furukawa, A., Baba, T., Ohta, K., Madihian, M., Honjo, K., Furukawa, A., Baba, T. & Ohta, K., 1988 1月 1, In: Electronics Letters. 24, 14, p. 872-873 2 p.

  研究成果: Article › 査読

  • Heterojunction bipolar transistors 100%
  • Substrates 29%
• 1989

  Application of AlGaAs/GaAs HBT's to High-speed CML Logic Family Fabrication

  Madihian, M., Tanaka, S. I., Hayama, N., Okamoto, A. & Honjo, K., 1989 4月, In: IEEE Transactions on Electron Devices. 36, 4, p. 625-631 7 p.

  研究成果: Article › 査読

  • Logic gates 100%
  • Heterojunction bipolar transistors 99%
  • Current Gain 74%
  • Time delay 68%
  • Fabrication 61%
  1 被引用数 (Scopus)

• Extension of High fT Operation Bias Range for an AlInAs/InGaAs HBT.

  S.Tanaka, S. T., M.Mizuta, S. T. A. F. B. M., K.Honjo, K. H. & Tanaka, S., 1989 1月 1, In: IEEE Cornell Conference. p. 175-184

  研究成果: Article › 査読
• 1990

  1/f Noise Reduction for Microwave Self-Aligned AlGaAs/GaAs HBTs with AlGaAs Surface Passivation Layer.

  N.Hayama, N. H., S.Tanaka, N. H., K.Honjo, K. H. & Tanaka, S., 1990 1月 1, In: Asia-Pacific Microwave Conference 1990. p. 1039-1041

  研究成果: Article › 査読

• Low-Frequency Noise Performance of Self-Aligned Inaias/InGaAs Heterojunction Bipolar Transistors

  Tanaka, S., Hayama, H., Honjo, K., Furukawa, A., Baba, T. & Mizuta, M., 1990 1月, In: Electronics Letters. 26, 18, p. 1439-1441 3 p.

  研究成果: Article › 査読

  • Heterojunction bipolar transistors 100%
  11 被引用数 (Scopus)

• Low-Frequency Noise Performance of Self-Aligned InAlAs/InGaAs Heterojunction Bipolar Transistors.

  S.Tanaka, S. T., M.Mizuta, S. T. N. H. F. B., K.Honjo, K. H. & Tanaka, S., 1990 8月 1, In: Electronics Letters. 26, p. 1439-1441

  研究成果: Article › 査読

  27 被引用数 (Scopus)
• 1992

  Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT’s with Polyimide Passivation

  Tanaka, S. I., Kasahara, K., Shimawaki, H. & Honjo, K., 1992 11月, In: IEEE Electron Device Letters. 13, 11, p. 560-562 3 p.

  研究成果: Article › 査読

  • Surface Recombination 100%
  • Passivation 78%
  • Heterojunction bipolar transistors 76%
  • Polyimides 76%
  • Chemical Passivation 65%
  8 被引用数 (Scopus)
• 1993

  A Flux-Based Approach to HBT Device Modeling.

  S.Tanaka, S. T., M.S.Lundstrom, M. S. L. & Tanaka, S., 1993 1月 1, In: IEEE International Electron Device Meeting. p. 505-509

  研究成果: Article › 査読

  1 被引用数 (Scopus)

• Characterization of Current-Induced Degradation in Be-Doped HBT's Based in GaAs and InP

  Tanaka, S. I., Shimawaki, H., Kasahara, K. & Honjo, K., 1993 7月, In: IEEE Transactions on Electron Devices. 40, 7, p. 1194-1201 8 p.

  研究成果: Article › 査読

  • Surface Recombination 100%
  • Induced currents 82%
  • Heterojunction bipolar transistors 76%
  • Degradation 45%
  • Electronic Property 26%
  7 被引用数 (Scopus)

• Characterization of Current-Induced Degradation in Be-Doped HBTs Based on GaAs and InP.

  S.Tanaka, S. T., K.Kasahara, S. T. H. S., K.Honjo, K. H. & Tanaka, S., 1993 7月 1, In: IEEE Transaction on Electron Devices. 40, p. 1194-1201

  研究成果: Article › 査読

  2 被引用数 (Scopus)
• 1994

  A compact HBT device model based on a one-flux treatment of carrier transport

  Tanaka, S. I. & Lundstrom, M. S., 1994 3月, In: Solid State Electronics. 37, 3, p. 401-410 10 p.

  研究成果: Article › 査読

  • Carrier transport 100%
  • Flux Method 91%
  • Heterojunction bipolar transistors 76%
  • bipolar transistors 69%
  • heterojunctions 56%
  29 被引用数 (Scopus)

• A Compact HBT Device Model Based on a One-Flux Treatment of Carrier Transport.

  S.Tanaka, S. T., M.S.Lundstrom, M. S. L. & Tanaka, S., 1994 3月 1, In: Solid-State Electronics. 37, p. 401-410

  研究成果: Article › 査読

  16 被引用数 (Scopus)

• Microwave/Millimeter-Wave Power HBTs with Regrown Extrinsic Base Layers.

  Y.Amamiya, Y. A., H.Shimawaki, Y. A. C. W. K. G. T. F., K.Honjo, K. H. & Tanaka, S., 1994 1月 1, In: IEEE International Electron Device Meeting. p. 199-202

  研究成果: Article › 査読

  1 被引用数 (Scopus)
• 1995

  A Flux-Based Study of Carrier Transport in Thin Base Diodes and Transistors.

  S.Tanaka, S. T., M.S.Lundstrom, M. S. L. & Tanaka, S., 1995 10月 1, In: IEEE Transaction on Electron Devices. 42, p. 1806-1815

  研究成果: Article › 査読

  6 被引用数 (Scopus)

• AlGaAs/GaAs Heterojunction Bipolar Transistors with InGaAs Etch-Stop Layer

  Y.Miyoshi, Y. M., K.Honjo, Y. M. S. T. G. & Tanaka, S., 1995 1月 1, In: Int. Symp. on Compound Semiconductors (ISCS). p. 661-666

  研究成果: Article › 査読

• A small-signal, one-flux analysis of short-base transport

  Alam, M. A., Tanaka, S. I. & Lundstrom, M. S., 1995 1月, In: Solid State Electronics. 38, 1, p. 177-182 6 p.

  研究成果: Article › 査読

  • Current Gain 100%
  • Boltzmann Equation 94%
  • Transport Property 52%
  • Fluxes 45%
  • Ballistics 41%
  5 被引用数 (Scopus)

• A Small-Signal One-Flux Analysis of Short-Base Transport.

  A.Alam, A. A., S.Tanaka, A. A., M.S.Lundstrom, M. S. L. & Tanaka, S., 1995 1月 1, In: Solid-State Electronics. 38, p. 177-182

  研究成果: Article › 査読

  10 被引用数 (Scopus)

• High-Power AlGaAs/GaAs HBTs for Ka-Band Operation.

  C.W.Kim, C. W. K., N.Goto, C. W. K. S. T. A. F. S. M., K.Honjo, K. H. & Tanaka, S., 1995 1月 1, In: IEEE GaAs IC Symposium. p. 159-162

  研究成果: Article › 査読

• On the carrier mobility in forward-biased semiconductor barriers

  Lundstrom, M. & Tanaka, SI., 1995, In: Applied Physics Letters. p. 962 1 p.

  研究成果: Article › 査読

  • carrier mobility 100%
  • diffusion coefficient 79%
  • kinetic energy 51%
  • semiconductor diodes 41%
  • heterojunctions 28%
  1 被引用数 (Scopus)

• On the Carrier Mobility in Forward-Biased Semiconductor Barriers.

  M.S.Lundstrom, M. S. L., S.Tanaka, S. T. & Tanaka, S., 1995 1月 1, In: Applied Physics Letters. 66, p. 962-964

  研究成果: Article › 査読

  13 被引用数 (Scopus)
• 1996

  A 3.6W 26GHz-Band AlGaAs/GaAs HBT Power Amplifier.

  Murakami, S., Goto, S. M. T. A. S., K.Honjo, K. H. & Tanaka, S., 1996 10月 1, In: IEEE GaAs IC Symposium. p. 99-102

  研究成果: Article › 査読

• High-Power High-Efficiency HBT Cell Design for 26GHz Power Amplifier.r

  S.Tanaka, S. T., Goto, S. T. S. M. A. S., K.Honjo, K. H. & Tanaka, S., 1996 1月 1, In: MTT-S International Microwave Symposium. 2, p. 843-846

  研究成果: Article › 査読

  6 被引用数 (Scopus)
• 1997

  Common Base HBTs for Ka-Band Applications.

  S.Tanaka, S. T., Takayama, S. T. Y. A. M. S. G., K.Honjo, K. H. & Tanaka, S., 1997 1月 1, In: Topical Symposium on Millimeter Waves. p. 27-30

  研究成果: Article › 査読

  4 被引用数 (Scopus)

• High fmax AlGaAs/InGaAs HBT and Their Application to Millimeter Wave Ranges.

  K.Honjo, K. H., H.Shimawaki, K. H., S.Tanaka, S. T. & Tanaka, S., 1997 1月 1, In: Asia-Pacific Microwave Conference. p. 733-736

  研究成果: Article › 査読

  1 被引用数 (Scopus)
• 1998

  A 38-GHz Low Pahse Noise Monolithic VCO for FM MOD Using an AlGaAs HBT with p+ Regrown Base contacts.

  K.Tanji, K. T., S.Tanaka, K. T. T. K. A. N. S., K.Wada, K. W. & Tanaka, S., 1998 1月 1, In: European Microwave Conference. p. 47-51

  研究成果: Article › 査読

  7 被引用数 (Scopus)

• Design considerations for millimeter-wave power HBT's based on gain performance analysis

  Tanaka, S. N. I., Amamiya, Y., Murakami, S., Shimawaki, H., Goto, N., Takayama, Y. & Honjo, K., 1998, In: IEEE Transactions on Electron Devices. 45, 1, p. 36-44 9 p.

  研究成果: Article › 査読

  • Wave power 100%
  • Parasitic 92%
  • Heterojunction bipolar transistors 89%
  • Millimeter waves 74%
  • Voltage 54%
  13 被引用数 (Scopus)

• Design Considerations for Millimetwer-Wave Power HBTs Based on Gain Performance Analysis.

  S.Tanaka, S. T., Y.Takayama, S. T. Y. A. M. S. G., K.Honjo, K. H. & Tanaka, S., 1998 1月 1, In: IEEE Transaction on Electron Devices. 45, p. 36-44

  研究成果: Article › 査読

• High Power Density 35-GHz HBT Power Amplifiers.

  S.Tanaka, S. T., Madihian, M., Toyoshima, H., K.Honjo, K. H. & Tanaka, S., 1998 12月 1, In: Asia Pasific Microwave Conference (APMC). p. 559-662

  研究成果: Article › 査読

  34 被引用数 (Scopus)

• Microwave Low Noise HBT.

  H.Dodo, H. D., H.Shimawaki, H. D. S. T. A. N., K.Honjo, K. H. & Tanaka, S., 1998 6月 1, In: MTT-S International Microwave Symposium. p. 693-696

  研究成果: Article › 査読
• 2000

  A Ka-Band HBT MMIC Power Amplifier.

  S.Tanaka, S. T., K.Hosoya, S. T. S. Y. A. N. S., K.Honjo, K. H. & Tanaka, S., 2000 6月 1, In: MTT-S International Microwave Symposium (2000). 1, p. 553-556

  研究成果: Article › 査読

  2 被引用数 (Scopus)

• A Low Pahse Noise 18-GHz HBT Oscillator Utilizing a (λ±δ/4) Open Stubs Resonator .

  K.Hosoya, K. H., H.Shimawaki, K. H. S. T. A. N., K.Honjo, K. H. & Tanaka, S., 2000 1月 1, In: Asia Pasific Microwave Conference (APMC). 1, p. 64-67

  研究成果: Article › 査読

• A Low Pahse Noise 38-GHz HBT MMIC Oscillator utilizing a novel transmisson line resonator.

  K.Hosoya, K. H., H.Shimawaki, K. H. S. T. A. N., K.Honjo, K. H. & Tanaka, S., 2000 1月 1, In: MTT-S International Microwave Symposium (2000). 1, p. 47-50

  研究成果: Article › 査読

  11 被引用数 (Scopus)

• Design and fabrication of a millimeter-wave MMIC HBT VCO with consideration for modulation linearity and low phase noise

  Kaneko, T., Tanji, K., Amamiya, Y., Niwa, T., Shimawaki, H., Tanaka, S. & Wada, K., 2000 1月 1, In: NEC Research and Development. 41, 1, p. 44-48 5 p.

  研究成果: Article › 査読

  • Bipolar transistors 100%
  • Monolithic microwave integrated circuits 92%
  • Variable frequency oscillators 90%
  • Phase noise 87%
  • Millimeter waves 80%
• 2001

  V-band MMIC LNAs using Superlattice-Inserted InP HJFETs.

  A.Fujihara, A. F., N.Samoto, A. F. H. M. Y. M., S.Tanaka, S. T. & Tanaka, S., 2001 1月 1, In: International Conference on Indium Phosphide and Related Componds (2001).

  研究成果: Article › 査読
• 2002

  40-Gb/s Optical Receiver IC Cipset including a Transimpedance Amplifier a Deifferential Amplifier and a Decision Circuit Using GaAs-based HBT technology.

  Amamiya, Y., T.Takeuchi, Y. A. S. K. H. Y. M., H.Hida, H. H. & Tanaka, S., 2002 1月 1, In: MTT-S International Microwave Symposium. p. 87-90

  研究成果: Article › 査読

  22 被引用数 (Scopus)

• The Effect of Emitter Size Scaling on fmax in InP/InGaAs HBTs

  Ikenaga, Y., S.Tanaka, Y. I., Fujihara, A. & Tanaka, S., 2002 1月 1, In: Int. Conf. on Solid State Device and Materials (SSDM). p. 274

  研究成果: Article › 査読
• 2003

  1.5-V Low Supply Voltage 43-Gb/s Delayed Flip Flop Circuit

  Amamiya, Y., S.Tanaka, Y. A. S. Y. F., H.Hida, H. H. & Tanaka, S., 2003 1月 1, In: MTT-S International Microwave Symposium (2003). p. 169-172

  研究成果: Article › 査読

  1 被引用数 (Scopus)

• An InGaP-HBT IC chipset for 40-Gbps optical transmission systems on the basis of a microwave circuit design scheme.

  K.Hosoya, K. H., S.Wada, K. H. Y. S. A. Y. M. F. K., H.Hida, H. H. & Tanaka, S., 2003 1月 1, In: European Microwave Conference. p. 627-630

  研究成果: Article › 査読
• 2004

  110-Gbps Multiplexing and Demultiplexing ICs

  Suzuki, Y., S.Tanaka, Y. S. A. Y. W. U. K., H.Hida, H. H. & Tanaka, S., 2004 1月 1, In: IEEE International Solid-State Circuits Conference (ISSCC).

  研究成果: Article › 査読

• 120-Gb/s multiplexing and 110-Gb/s demultiplexing ICs

  Suzuki, Y., Yamazaki, Z., Amamiya, Y., Wada, S., Uchida, H., Kurioka, C., Tanaka, S. & Hida, H., 2004 12月, In: IEEE Journal of Solid-State Circuits. 39, 12, p. 2397-2402 6 p.

  研究成果: Article › 査読

  • Demultiplexing 100%
  • Flip flop circuits 78%
  • Multiplexing 68%
  • Heterojunction bipolar transistors 39%
  • Microstrip lines 38%
  22 被引用数 (Scopus)

• Lateral and vertical scaling of high-f_max InP-based HBTs

  Tanaka, S., Ikenaga, Y. & Fujihara, A., 2004 6月, In: IEICE Transactions on Electronics. E87-C, 6, p. 924-928 5 p.

  研究成果: Article › 査読

  • Fluorescence Maxima 100%
  • Heterojunction bipolar transistors 89%
  • Resistance 15%

• Lateral and Vertical Scaling of High-fmax InP-Based HBTs

  Tanaka, S. & Fujihara, S. TY. I., 2004 6月 1, In: IEICE Transactions on Electoronics. E87-C, p. 924-928

  研究成果: Article › 査読