@inproceedings{ff7298d10eee4e77be0bbe24de0c31f0,
title = "0.1 μm GaAs MESFET technology for ultra-high-speed digital and analog ICs",
abstract = "A 0.1 μm gate-length GaAs IC technology is reported. A 48.3 GHz dynamic-frequency divider, and an amplifier with 20 dB gain and 17.5 GHz bandwidth are successfully fabricated by integrating over 100 GHz cut-off frequency MESFETs by using a new BP-LDD device structure.",
author = "Masami Tokumitsu and Makoto Hirano and Koichi Murata and Yuhki Imai and Kimiyoshi Yamasaki",
year = "1994",
month = jan,
day = "1",
language = "English",
isbn = "0780317793",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Publ by IEEE",
pages = "1629--1632",
booktitle = "IEEE MTT-S International Microwave Symposium Digest",
note = "Proceedings of the IEEE MTT-S International Microwave Symposium ; Conference date: 23-05-1994 Through 27-05-1994",
}