0.1-μm p+-GaAs gate HJFETs with fT= 121 GHz fabricated using all dry-etching and selective MOMBE growth

Shigeki Wada; Naoki Furuhata; Masatoshi Tokushima; Muneo Fukaishi; Hikaru Hida; Tadashi Maeda

0.1-μm p⁺-GaAs gate HJFETs with f_T= 121 GHz fabricated using all dry-etching and selective MOMBE growth

Shigeki Wada, Naoki Furuhata, Masatoshi Tokushima, Muneo Fukaishi, Hikaru Hida, Tadashi Maeda

研究成果: Conference article › 査読

抄録

This paper reports the first successful fabrication of a high-performance, 0.1-μm, T-shaped, p⁺-gate pseudomorphic heterojunction-FET (HJFET) using all dry-etching and selective MOMBE growth techniques. We have developed a two-step dry-etching technique that compensates for the poor dry-etching resistance of PMMA, and a voidless gate-electrode filling technique for high aspect-ratio openings with selective MOMBE p⁺-GaAs growth. Our efforts results in a reduction of external gate fringing capacitance and a improvement in gate turn-on voltage. The fabricated 0.1-μm, p⁺-gate n-Al_0.2Ga_0.8As/In_0.25Ga_0.75As HJFET exhibits excellent microwave performance, f_T= 121 GHz and f_max= 144 GHz.

本文言語	English
ページ（範囲）	197-200
ページ数	4
ジャーナル	Technical Digest - International Electron Devices Meeting
出版ステータス	Published - 1995 12月 1
外部発表	はい
イベント	Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA 継続期間: 1995 12月 10 → 1995 12月 13

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

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引用スタイル

@article{c4740c7f3c784682b75aa479e6352c35,

title = "0.1-μm p+-GaAs gate HJFETs with fT= 121 GHz fabricated using all dry-etching and selective MOMBE growth",

abstract = "This paper reports the first successful fabrication of a high-performance, 0.1-μm, T-shaped, p+-gate pseudomorphic heterojunction-FET (HJFET) using all dry-etching and selective MOMBE growth techniques. We have developed a two-step dry-etching technique that compensates for the poor dry-etching resistance of PMMA, and a voidless gate-electrode filling technique for high aspect-ratio openings with selective MOMBE p+-GaAs growth. Our efforts results in a reduction of external gate fringing capacitance and a improvement in gate turn-on voltage. The fabricated 0.1-μm, p+-gate n-Al0.2Ga0.8As/In0.25Ga0.75As HJFET exhibits excellent microwave performance, fT= 121 GHz and fmax= 144 GHz.",

author = "Shigeki Wada and Naoki Furuhata and Masatoshi Tokushima and Muneo Fukaishi and Hikaru Hida and Tadashi Maeda",

year = "1995",

month = dec,

day = "1",

language = "English",

pages = "197--200",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 ; Conference date: 10-12-1995 Through 13-12-1995",

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TY - JOUR

T1 - 0.1-μm p+-GaAs gate HJFETs with fT= 121 GHz fabricated using all dry-etching and selective MOMBE growth

AU - Wada, Shigeki

AU - Furuhata, Naoki

AU - Tokushima, Masatoshi

AU - Fukaishi, Muneo

AU - Hida, Hikaru

AU - Maeda, Tadashi

PY - 1995/12/1

Y1 - 1995/12/1

N2 - This paper reports the first successful fabrication of a high-performance, 0.1-μm, T-shaped, p+-gate pseudomorphic heterojunction-FET (HJFET) using all dry-etching and selective MOMBE growth techniques. We have developed a two-step dry-etching technique that compensates for the poor dry-etching resistance of PMMA, and a voidless gate-electrode filling technique for high aspect-ratio openings with selective MOMBE p+-GaAs growth. Our efforts results in a reduction of external gate fringing capacitance and a improvement in gate turn-on voltage. The fabricated 0.1-μm, p+-gate n-Al0.2Ga0.8As/In0.25Ga0.75As HJFET exhibits excellent microwave performance, fT= 121 GHz and fmax= 144 GHz.

AB - This paper reports the first successful fabrication of a high-performance, 0.1-μm, T-shaped, p+-gate pseudomorphic heterojunction-FET (HJFET) using all dry-etching and selective MOMBE growth techniques. We have developed a two-step dry-etching technique that compensates for the poor dry-etching resistance of PMMA, and a voidless gate-electrode filling technique for high aspect-ratio openings with selective MOMBE p+-GaAs growth. Our efforts results in a reduction of external gate fringing capacitance and a improvement in gate turn-on voltage. The fabricated 0.1-μm, p+-gate n-Al0.2Ga0.8As/In0.25Ga0.75As HJFET exhibits excellent microwave performance, fT= 121 GHz and fmax= 144 GHz.

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M3 - Conference article

AN - SCOPUS:0029516204

SN - 0163-1918

SP - 197

EP - 200

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1995 International Electron Devices Meeting, IEDM'95

Y2 - 10 December 1995 through 13 December 1995

ER -

0.1-μm p+-GaAs gate HJFETs with fT= 121 GHz fabricated using all dry-etching and selective MOMBE growth

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ASJC Scopus subject areas

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0.1-μm p⁺-GaAs gate HJFETs with f_T= 121 GHz fabricated using all dry-etching and selective MOMBE growth