TY - GEN
T1 - -1/+0.8°C error, accurate temperature sensor using 90nm IV CMOS for on-line thermal monitoring of VLSI circuits
AU - Sasaki, Masahiro
AU - Ikeda, Makoto
AU - Asada, Kunihiro
PY - 2006/10/13
Y1 - 2006/10/13
N2 - This paper proposes quite accurate four-transistor temperature sensor designed and developed for thermal testing and monitoring of VLSI circuits. The sensor is featured with an extremely small area of 11.6×4.1 μm 2 and low power consumption of about 25 μW. The performance of the sensor is highly linear and the predicted temperature error is merely -1.0-+0.8°C using two-point calibration within the range of 50 - 125°C. The sensor is implemented in ASPLA CMOS 90nm 1P6M process, operated at supply voltage of IV, and tested successfully.
AB - This paper proposes quite accurate four-transistor temperature sensor designed and developed for thermal testing and monitoring of VLSI circuits. The sensor is featured with an extremely small area of 11.6×4.1 μm 2 and low power consumption of about 25 μW. The performance of the sensor is highly linear and the predicted temperature error is merely -1.0-+0.8°C using two-point calibration within the range of 50 - 125°C. The sensor is implemented in ASPLA CMOS 90nm 1P6M process, operated at supply voltage of IV, and tested successfully.
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U2 - 10.1109/ICMTS.2006.1614264
DO - 10.1109/ICMTS.2006.1614264
M3 - Conference contribution
AN - SCOPUS:33749509956
SN - 1424401674
SN - 9781424401673
T3 - IEEE International Conference on Microelectronic Test Structures
SP - 9
EP - 12
BT - 2006 International Conference on Microelectronic Test Structures - Digest of Technical Papers
T2 - 2006 International Conference on Microelectronic Test Structures
Y2 - 6 March 2006 through 9 March 2006
ER -