1/4 miniaturized passive elements for GaAs MMICs

Makoto Hirano, Yuhki Imai, Kazuyoshi Asai

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

Novel miniature structures for passive elements--inductors and capacitors--are proposed to reduce the area they consume in GaAs MMICs. The miniaturized inductors are fabricated out of thick metal micro-wire, 10 μm thick, 6 μm wide, and with 2 μm spacing. The miniaturized capacitors are constructed as a corrugated structure with an insulator layer sandwiched between electrodes on a S.I. GaAs substrate with 3-μm-deep taper holes, in a checkerboard pattern. Both elements are fabricated employing very simple technology as a result of their monolayer structures. Adopting the proposed structures, the elements have been shrunk to 1/4 the size of conventional elements.

本文言語English
ホスト出版物のタイトルTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
出版社Publ by IEEE
ページ37-40
ページ数4
ISBN(印刷版)078030196X
出版ステータスPublished - 1992 1月
外部発表はい
イベント13th Annual GaAs IC Symposium Technical Digest - Monterey, CA, USA
継続期間: 1991 10月 201991 10月 23

出版物シリーズ

名前Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Other

Other13th Annual GaAs IC Symposium Technical Digest
CityMonterey, CA, USA
Period91/10/2091/10/23

ASJC Scopus subject areas

  • 電子工学および電気工学

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