2-D simulations of trap-related drain-current transients in GaAs MESFETs and requirements for the substrate in MESFET-ICs

K.Horio K.Horio, Kazushige Horio

研究成果: Article › 査読

本文言語	English
ページ（範囲）	1-17
ジャーナル	Report of Research Laboratory of Engineering
巻	10
出版ステータス	Published - 1996 3月 1

引用スタイル

@article{ac7ede5c6ee243fa9ea4fabe4990c60c,

title = "2-D simulations of trap-related drain-current transients in GaAs MESFETs and requirements for the substrate in MESFET-ICs",

author = "K.Horio K.Horio and Kazushige Horio",

year = "1996",

month = mar,

day = "1",

language = "English",

volume = "10",

pages = "1--17",

journal = "Report of Research Laboratory of Engineering",

}