3.6-W 26GHz-band AlGaAs/GaAs HBT power amplifier

S. Murakami; S. Tanaka; Y. Amamiya; H. Shimawaki; N. Goto; K. Honjo; Y. Ishida; Y. Saitoh; M. Yajima; Y. Hisada

3.6-W 26GHz-band AlGaAs/GaAs HBT power amplifier

S. Murakami, S. Tanaka, Y. Amamiya, H. Shimawaki, N. Goto, K. Honjo, Y. Ishida, Y. Saitoh, M. Yajima, Y. Hisada

研究成果: Paper › 査読

抄録

A 3.6-watt 26-GHz band AlGaAs/GaAs heterojunction bipolar transistor (HBT) power amplifier is described. The amplifier is composed of two common-base (CB) HBT chips, and achieves a output power of 3.63 W (35.6 dBm), power-added efficiency (PAE) of 21.2% and associated gain of 6.2 dB with a 1-dB bandwidth between 25.5 and 26.5 GHz. As far as we know, the output power obtained in this work is more than twice that obtained in other works in these frequency bands.

本文言語	English
ページ	99-102
ページ数	4
出版ステータス	Published - 1996
イベント	Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA 継続期間: 1996 11月 3 → 1996 11月 6

Other

Other	Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
City	Orlando, FL, USA
Period	96/11/3 → 96/11/6

ASJC Scopus subject areas

電子工学および電気工学

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title = "3.6-W 26GHz-band AlGaAs/GaAs HBT power amplifier",

abstract = "A 3.6-watt 26-GHz band AlGaAs/GaAs heterojunction bipolar transistor (HBT) power amplifier is described. The amplifier is composed of two common-base (CB) HBT chips, and achieves a output power of 3.63 W (35.6 dBm), power-added efficiency (PAE) of 21.2% and associated gain of 6.2 dB with a 1-dB bandwidth between 25.5 and 26.5 GHz. As far as we know, the output power obtained in this work is more than twice that obtained in other works in these frequency bands.",

author = "S. Murakami and S. Tanaka and Y. Amamiya and H. Shimawaki and N. Goto and K. Honjo and Y. Ishida and Y. Saitoh and M. Yajima and Y. Hisada",

year = "1996",

language = "English",

pages = "99--102",

note = "Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium ; Conference date: 03-11-1996 Through 06-11-1996",

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T1 - 3.6-W 26GHz-band AlGaAs/GaAs HBT power amplifier

AU - Murakami, S.

AU - Tanaka, S.

AU - Amamiya, Y.

AU - Shimawaki, H.

AU - Goto, N.

AU - Honjo, K.

AU - Ishida, Y.

AU - Saitoh, Y.

AU - Yajima, M.

AU - Hisada, Y.

PY - 1996

Y1 - 1996

N2 - A 3.6-watt 26-GHz band AlGaAs/GaAs heterojunction bipolar transistor (HBT) power amplifier is described. The amplifier is composed of two common-base (CB) HBT chips, and achieves a output power of 3.63 W (35.6 dBm), power-added efficiency (PAE) of 21.2% and associated gain of 6.2 dB with a 1-dB bandwidth between 25.5 and 26.5 GHz. As far as we know, the output power obtained in this work is more than twice that obtained in other works in these frequency bands.

AB - A 3.6-watt 26-GHz band AlGaAs/GaAs heterojunction bipolar transistor (HBT) power amplifier is described. The amplifier is composed of two common-base (CB) HBT chips, and achieves a output power of 3.63 W (35.6 dBm), power-added efficiency (PAE) of 21.2% and associated gain of 6.2 dB with a 1-dB bandwidth between 25.5 and 26.5 GHz. As far as we know, the output power obtained in this work is more than twice that obtained in other works in these frequency bands.

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M3 - Paper

AN - SCOPUS:0030401734

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EP - 102

T2 - Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium

Y2 - 3 November 1996 through 6 November 1996

ER -

3.6-W 26GHz-band AlGaAs/GaAs HBT power amplifier

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Other

ASJC Scopus subject areas

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