40-Gb/s optical receiver IC chipset - including a transimpedance amplifier, a differential amplifier, and a decision circuit - using GaAs-based HBT technology

Y. Amamiya; Y. Suzuki; M. Kawanaka; K. Hosoya; Z. Yamazaki; M. Mamada; H. Takahashi; S. Wada; T. Kato; Y. Ikenaga; S. Tanaka; T. Takeuchi; H. Hida

40-Gb/s optical receiver IC chipset - including a transimpedance amplifier, a differential amplifier, and a decision circuit - using GaAs-based HBT technology

Y. Amamiya, Y. Suzuki, M. Kawanaka, K. Hosoya, Z. Yamazaki, M. Mamada, H. Takahashi, S. Wada, T. Kato, Y. Ikenaga, S. Tanaka, T. Takeuchi, H. Hida

研究成果: Conference article › 査読

22 被引用数 (Scopus)

抄録

GaAs-based HBTs with an InGaP emitter were used to develop key components of a 40-Gb/s optical receiver: a transimpedance amplifier, a differential main amplifier, and a decision circuit. The frequency response of the transimpedance amplifier was flattened by inserting an RC series circuit at the input stage. As a result, the transimpedance amplifier module produced a well-opened 43-Gb/s eye diagram with 400 mVp-p dynamic range. The differential main amplifier and the decision circuit produced 43-Gb/s eye diagrams with a large dynamic range of 700 mVp-p, which is the first 40-Gb/s demonstration using GaAs-based HBTs. These three ICs are thus applicable to a 40-Gb/s optical receiver.

本文言語	English
ページ（範囲）	87-90
ページ数	4
ジャーナル	IEEE MTT-S International Microwave Symposium Digest
巻	1
出版ステータス	Published - 2002 1月 1
イベント	2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States 継続期間: 2002 6月 2 → 2002 6月 7

ASJC Scopus subject areas

放射線
凝縮系物理学
電子工学および電気工学

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引用スタイル

Amamiya, Y., Suzuki, Y., Kawanaka, M., Hosoya, K., Yamazaki, Z., Mamada, M., Takahashi, H., Wada, S., Kato, T., Ikenaga, Y., Tanaka, S., Takeuchi, T., & Hida, H. (2002). 40-Gb/s optical receiver IC chipset - including a transimpedance amplifier, a differential amplifier, and a decision circuit - using GaAs-based HBT technology. IEEE MTT-S International Microwave Symposium Digest, 1, 87-90.

Amamiya, Y, Suzuki, Y, Kawanaka, M, Hosoya, K, Yamazaki, Z, Mamada, M, Takahashi, H, Wada, S, Kato, T, Ikenaga, Y, Tanaka, S, Takeuchi, T & Hida, H 2002, '40-Gb/s optical receiver IC chipset - including a transimpedance amplifier, a differential amplifier, and a decision circuit - using GaAs-based HBT technology', IEEE MTT-S International Microwave Symposium Digest, vol. 1, pp. 87-90.

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abstract = "GaAs-based HBTs with an InGaP emitter were used to develop key components of a 40-Gb/s optical receiver: a transimpedance amplifier, a differential main amplifier, and a decision circuit. The frequency response of the transimpedance amplifier was flattened by inserting an RC series circuit at the input stage. As a result, the transimpedance amplifier module produced a well-opened 43-Gb/s eye diagram with 400 mVp-p dynamic range. The differential main amplifier and the decision circuit produced 43-Gb/s eye diagrams with a large dynamic range of 700 mVp-p, which is the first 40-Gb/s demonstration using GaAs-based HBTs. These three ICs are thus applicable to a 40-Gb/s optical receiver.",

author = "Y. Amamiya and Y. Suzuki and M. Kawanaka and K. Hosoya and Z. Yamazaki and M. Mamada and H. Takahashi and S. Wada and T. Kato and Y. Ikenaga and S. Tanaka and T. Takeuchi and H. Hida",

year = "2002",

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language = "English",

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T1 - 40-Gb/s optical receiver IC chipset - including a transimpedance amplifier, a differential amplifier, and a decision circuit - using GaAs-based HBT technology

AU - Amamiya, Y.

AU - Suzuki, Y.

AU - Kawanaka, M.

AU - Hosoya, K.

AU - Yamazaki, Z.

AU - Mamada, M.

AU - Takahashi, H.

AU - Wada, S.

AU - Kato, T.

AU - Ikenaga, Y.

AU - Tanaka, S.

AU - Takeuchi, T.

AU - Hida, H.

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N2 - GaAs-based HBTs with an InGaP emitter were used to develop key components of a 40-Gb/s optical receiver: a transimpedance amplifier, a differential main amplifier, and a decision circuit. The frequency response of the transimpedance amplifier was flattened by inserting an RC series circuit at the input stage. As a result, the transimpedance amplifier module produced a well-opened 43-Gb/s eye diagram with 400 mVp-p dynamic range. The differential main amplifier and the decision circuit produced 43-Gb/s eye diagrams with a large dynamic range of 700 mVp-p, which is the first 40-Gb/s demonstration using GaAs-based HBTs. These three ICs are thus applicable to a 40-Gb/s optical receiver.

AB - GaAs-based HBTs with an InGaP emitter were used to develop key components of a 40-Gb/s optical receiver: a transimpedance amplifier, a differential main amplifier, and a decision circuit. The frequency response of the transimpedance amplifier was flattened by inserting an RC series circuit at the input stage. As a result, the transimpedance amplifier module produced a well-opened 43-Gb/s eye diagram with 400 mVp-p dynamic range. The differential main amplifier and the decision circuit produced 43-Gb/s eye diagrams with a large dynamic range of 700 mVp-p, which is the first 40-Gb/s demonstration using GaAs-based HBTs. These three ICs are thus applicable to a 40-Gb/s optical receiver.

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