A 7 Mask CMOS Technology Utilizing Liquid Phase Selective Oxide Deposition

K.Kanba K.Kanba, T.Horiuchi T.Horiuchi, T.Homma T.Homma, Y.Murao Y.Murao, K.Okumura K.Okumura, Tetsuya Homma

研究成果: Article › 査読

本文言語	English
ページ（範囲）	637-640
ジャーナル	Proceedings of IEEE International Electron Devices Meeting
出版ステータス	Published - 1991 12月 8

引用スタイル

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title = "A 7 Mask CMOS Technology Utilizing Liquid Phase Selective Oxide Deposition",

author = "K.Kanba K.Kanba and T.Horiuchi T.Horiuchi and T.Homma T.Homma and Y.Murao Y.Murao and K.Okumura K.Okumura and Tetsuya Homma",

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language = "English",

pages = "637--640",

journal = "Proceedings of IEEE International Electron Devices Meeting",

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AU - T.Horiuchi, T.Horiuchi

AU - T.Homma, T.Homma

AU - Y.Murao, Y.Murao

AU - K.Okumura, K.Okumura

AU - Homma, Tetsuya

PY - 1991/12/8

Y1 - 1991/12/8

M3 - Article

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EP - 640

JO - Proceedings of IEEE International Electron Devices Meeting

JF - Proceedings of IEEE International Electron Devices Meeting

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